Symposium EQ20-Beyond Graphene 2D Materials—Synthesis, Properties and Device Applications

Beyond graphene two-dimensional (2D) materials are extreme surfaces that offers the ultimate flexibility and scaling potential for device miniaturization, as well as, a remarkable platform to study new phenomena in chemistry, biology and condensed matter physics. These materials exhibit a compellingly wide range of exotic properties such as large exciton binding energies, valley polarization, magnetism and non-trivial topologies that can be strongly coupled to produce correlated properties. These compelling properties are observed in individual atomic layers that can be stacked and/or twisted into synthetic heterostructures that are susceptible to physical, electrical and/or chemical modifications. All of these physical properties are intricately dependent on the composition, structure, layer number and phase. These layers can be exfoliated from bulk crystals or developed into large area, high purity grown synthetic heterojunctions with atomically clean interfaces. As the design space of synthetic 2D materials continues to expend, new functionalities and applications will emerge. This interdisciplinary symposium brings together a diverse host of researchers to capture the latest developments in synthesis, properties, characterization and applications of “beyond graphene” 2D materials, with emphasis on elemental (phosphorene, silicene, tellurene, etc.), 2D compounds (MXenes, oxides, nitrides and carbides) and 2D layered (transition-metal di-/tri-chalcogenides, group-III/-IV chalcogenides) materials, alloys and van der Waals heterostructures. This symposium will also focus on recent progress of novel devices enabled by 2D materials, particularly with recent developments in viable routes for large scale synthesis, doping and integration of monolayers, lateral and vertical heterostructures, and the emergence of 2D perovskites and hybrid organic-inorganic 2D heterostructures.

Topics will include:

Largescale Synthesis, Doping and Alloying of 2D Materials and van der Waals Heterostructures.
Fundamental Physical Properties in van der Waals Heterostructures.
Processing of Elemental and Other 2D Materials (i.e. Oxides, Nitrides, MXenes, etc.) Beyond Graphene.
2D Materials for Neuromorphic Computing and Quantum Technologies.
Recent Advances in Sensors, Detectors, Actuators and Energy Storage.
Applications in Novel Electronics, Optics and Photonic Devices.
New Discoveries in 2D Materials and Heterostructures from First Principles Modeling.
Atomic Scale (Structural, Electrical and Optical, etc.) Characterization.
Emerging 2D Perovskites, MOFs, COFs and Hybrid Organic-Inorganic 2D Heterostructures.
Recent Advances in 2D Magnetism, Ferroelectrics and Phase Change Materials.
2D Materials Produced by Wet Chemistry for Flexible Devices.

Invited Speakers:

Deji Akinwande (The University of Texas at Austin, USA)
Kwabena Bediako (University of California, Berkeley, USA)
Federico Capasso (Harvard University, USA)
Andres Castellano-Gomez (Instituto de Ciencia de Materiales de Madrid, Spain)
Manish Chhowalla (University of Cambridge, United Kingdom)
Michael Crommie (University of California, Berkeley, USA)
Cory Dean (Columbia University, USA)
Mircea Dinca (Massachusetts Institute of Technology, USA)
Aaron Franklin (Duke University, USA)
Tony Heinz (Stanford University, USA)
Mark Hersam (Northwestern University, USA)
Shengxi Huang (The Pennsylvania State University, USA)
Deep Jariwala (University of Pennsylvania, USA)
Jieun Lee (Seoul National University, Republic of Korea)
Lain-Jong Li (The University of Hong Kong, Hong Kong)
Allan MacDonald (The University of Texas at Austin, USA)
Hongkun Park (Harvard University, USA)
Aleksandra Radenovic (École Polytechnique Fédérale de Lausanne, Switzerland)
Iuliana Radu (imec, Belgium)
Joan Redwing (The Pennsylvania State University, USA)
Frances Ross (Massachusetts Institute of Technology, USA)
Nahid Talebi (Christian Albrechts University in Kiel, Germany)
Ursula Wurstbauer (Technische Universität München, Germany)
Guangyu Zhang (Institute of Physics, Chinese Academy of Sciences, China)