2019 MRS Spring Meeting
Symposium QN06-Emerging Materials for Quantum Information
The desire to innovate beyond current computation technologies is motivated by major challenges in scaling, energy consumption and performance. Quantum information is an emerging paradigm with promise to replace conventional semiconductor transistor logic computers. Recent demonstrations of superconducting qubits performing single and two-qubit gate operations show that fault tolerant quantum computation schemes are within reach. Innovations in materials science, with potential contributions to exploit new materials and devices that are less sensitive to environment noise, and improve existing classes of materials that reduce environment noise, is an important area of research. Key challenges of this technology is the inherent difficulty of interfacing dissimilar materials with different electronic properties (i.e. semiconductors, metals, insulators, and superconductors) and the influence of nearby surfaces, that result in limiting qubit performance through elevated microwave losses, anomalous heating, flux noise, or charge noise. The realization of materials origins have led to a plethora of recent theoretical and experimental activity, driven both by fundamental scientific questions and the promise of future technological breakthroughs. The synthesis of materials, and characterization of the material structure, property, and performance provide opportunities to fundamentally shape the realization of a new generation of quantum information devices. This symposium will bring researchers in materials science and quantum information device communities in an attempt to connect materials properties to quantum devices and qubit (quantum bit) performance. Topics include research addressing materials issues in quantum information devices; in addition to research focused on new quantum states of matter that can support quantum information, and new combinations of materials that offer promise to introduce new classes of quantum information devices.
Topics will include:
- The role of surfaces and interfaces with quantum information device performance such as decoherence limits of shallow qubits and interfacial trap states as well as engineering Schottkey barriers at cryogenic temperatures
- Emerging quantum states of matter that have promise to support quantum information such as Majorana fermions, topological materials, and 2D materials
- New combinations of materials and interface states that may shift device quantum information device designs such as superconductor-semiconductor devices
- Novel synthesis methods of materials and devices used for quantum information
- Novel materials for use in quantum information devices
- Advanced characterization of materials employed in quantum information devices
- Advances and developments of ab-initio and multi-scale methods applied to materials used in quantum information systems
- Interaction of materials with quantum information such as single photon/spin sources, detectors, and dynamics near the ground state
Invited Speakers:
- Jordi Arbiol (ICREA, Spain)
- Erik Bakkers (Eindhoven University of Technology, Netherlands)
- Jerry Chow (IBM, USA)
- Jeremy Levy (University of Pittsburgh, USA)
- Vincenzo Lordi (Lawrence Livermore National Laboratory, USA)
- Daniel Loss (University of Basel, Switzerland)
- Josh Mutus (Google, USA)
- Eva Olsson (Chalmers University of Technology, Sweden)
- Christopher Palmstrom (University of California, Santa Barbara, USA)
- Giordano Scappucci (Delft University of Technology, Netherlands)
- Stefanie Simmons (Simon Fraser University, Canada)
- Joel Wang (Massachusetts Institute of Technology, USA)
- Roland Wiesendanger (University of Hamburg, Germany)
- Ali Yazdani (Princeton University, USA)
Symposium Organizers
Chris Richardson
University of Maryland
Laboratory for Physical Sciences
USA
Javad Shabani
New York University
USA
Jelena Klinovaja
University of Basel
Switzerland
Peter Krogstrup
Microsoft Quantum – Santa Barbara (Station Q) / University of Copenhagen
Denmark
Topics
annealing
atomic layer deposition
crystal growth
epitaxy
ion-implantation
lithography (deposition)
molecular beam epitaxy (MBE)
physical vapor deposition (PVD)
sputtering