Heterovalent integration of semiconductor structures based on combinations of Group IV, II-VI, III-V and IV-VI materials enable the monolithic integration of many kinds of electronic and optoelectronic devices onto a single substrate, thus offering potentially transformative impact on future semiconductor devices and integrated circuits and their functionalities. The platform has unique properties such as lattice-matching to a single substrate, bandgap-energy coverage of a broad optical spectrum ranging from near-UV to far-infrared, and very high electron and hole mobilities. These properties are also ideal for electronic and optoelectronic devices such as FETs and photo-detectors. Structures composed of these materials have an unexplored richness of structural and electronic properties based on the heterovalent nature of their interfaces and synthetically introduced additional periodicities, such as superlattices.

This symposium will cover the underlying fundamental physics and chemistry of heterovalent semiconductors and their interfaces, including structural, magnetic, transport, optical and doping properties, as well as opportunities for integration into novel electronic and optoelectronic devices. Interdisciplinary topics related to the physics, chemistry, materials science and engineering of heterovalent semiconductors and their interfaces will be highlighted by invited abstracts in order to accelerate the exploitation of these materials into real-world device applications. This symposium is expected to offer new and enhanced insights into the basic understanding and future exploitation of heterovalent interfaces.

atomic layer deposition chemical vapor deposition (CVD) (deposition) crystal growth crystalline electronic structure luminescence microstructure molecular beam epitaxy (MBE) optical properties transmission electron microscopy (TEM)