Symposium EP09-Devices and Materials to Extend the CMOS Roadmap for Logic and Memory Applications

The growth of the semiconductor industry has been driven by an insatiable demand for more connectivity across countries, organizations and communities. Semiconductor devices have become increasingly critical in enabling advanced functionalities for education, communication, entertainment, automotive, space and medical systems. To meet these demands, semiconductor devices need to be significantly more power efficient and more diverse in functionalities. A multi-disciplinary effort is ongoing worldwide to evaluate new concepts for both logic and memory applications to address these challenges. Devices such as Nanowire-FETs, Nanosheet-FETs, Negative Capacitance-FETs, Tunnel-FETs, Spin Transfer Torque Devices, Resistive-RAM, Magnetic-RAM, Phase Change Memory are some of the options being evaluated. To complement these efforts, extensive work is also ongoing to understand the properties and characteristics of new materials such as Transition Metal Dichalcogenides, Ferroelectrics, Compound Semiconductors, Spin-Based, Magnetic and Phase Change for implementation on various device architectures.
This symposium will bring together scientists and engineers working on the various aspects of the above-mentioned device designs and materials such as growth, interfaces, doping, metallization, process integration and device fabrication. Contributed abstracts in this symposium will be highlighted by invited abstracts from both academia and industry to accelerate the progress in this field.

• Nonclassical Transistor Design and Concepts including Nanowire-FETs, Nanosheet-FETs, Negative Capacitance-FETs, Tunnel-FETs, Spin Transfer Torque Devices, Resistive RAM, Magnetic RAM, Phase Change Memory and other New Device Concepts for Logic and Memory Applications.
• Material Focus including Geramium, Silicon-Germanium, Silicon-Germanium-Tin, Transition Metal Dichalcogenide, Ferroelectrics, Compound Semiconductors, Spin-Based, Magnetic, Phase Change and Materials relevant to Logic and Memory Applications.
• Process and Fabrication Technologies including Growth and Substrate Engineering, Metal WorkFunction and Interface Engineering, High-K Dielectrics Interfaces, Memory Materials Interfaces and Mechanisms, Doping, Metallization, Interfaces, Process Integration and Device Fabrication.
• Materials and Device Modeling including the crystal properties such as strain, piezoelectricty, electronic bandstructure, morphology of layers from semiconductors, workfunction, contact resistance, device concepts and device performance.

• Takashi Ando (IBM)
• Ali Javey (University of California, Berkeley, USA)
• Peide Ye (Purdue University, USA)
• Kirill Bolotin (Freie Universität Berlin, Germany)
• Po-Wen Chiu (National Tsing Hua University, Taiwan)
• Rohit Galatage (GLOBALFOUNDRIES, USA)
• Ru Huang (Peking University, China)
• Fareen Khaja (Applied Materials, Inc., USA)
• Tony Low (University of Minnesota, USA)
• Gang Niu (Xi'an Jiaotong University, China)
• Uwe Schroeder (NaMLab, Germany)
• Shinichi Takagi (University of Tokyo, Japan)
• Philip Wong (Stanford University, USA)
• Won Jong Yoo (Sungkyunkwan University, Republic of Korea)
• Shimeng Yu (Georgia Institute of Technology, USA)