April 2 - 6, 2018
Phoenix, Arizona
2018 MRS Spring Meeting

Symposium EP04-Reliability and Materials Issues of Semiconductor Optical and Electron Devices and Materials

Achieving high reliability is a key issue for semiconductor optical and electron devices and is as important as device performance for commercial application. Degradation of both the optical and electronic properties of semiconductor devices is strongly related to materials issues including defects, stress and quality of passivation. Many of these issues can occur during the device fabrication processes, i.e., crystal growth, impurity diffusion, ion-implantation, wet/dry etching, metallization, bonding, packaging, etc.

This symposium will review the current status of reliability and degradation of various semiconductor optical and electron devices as well as their materials issues in thin film growth, wafer processing, and device fabrication processes. It will also focus on defect engineering in semiconductors, control and application of defects for novel devices. It will also provide a forum for discussion on development of future research approaches.


Topics will include:

  • Materials issues and defect generation in semiconductor thin film growth: III-V, II-VI, III-V Nitrides, SiC, Diamond, Gallium Oxide-based semiconductors etc.
  • Materials issues and defect generation in wafer processing and device fabrication processes
  • Defect engineering (control and application of defects for novel devices) in semiconductors
  • Recombination enhanced defect reaction and related phenomena: Recombination-enhanced point defect generation, reaction, impurity (dopant) diffusion etc.
  • Reliability and degradation of LDs and LEDs: III-V's, II-VI’s, InGaN/GaN, and SiC etc.
  • Reliability and degradation of compound semiconductor LDs and LEDs on Si
  • Reliability and degradation of VCSELs: AlGaAs/GaAs, InGaAs/GaAs, GaInNAs/GaAs etc.
  • Reliability of nano-structured devices: Quantum dot lasers, quantum cascade lasers etc.
  • Reliability of GaAs, InP, SiC and GaN-related transistors and circuits
  • Reliability of GaAs, InP, and GaN-related transistors and circuits on Si
  • Reliability of other electronic and optoelectronics devices: solar cells, organic devices etc.
  • Reliability of metal-semiconductor contacts
  • Strain contribution to the device degradation
  • Failure analysis techniques: optical (PL/CL, OBIC, SNOM, …), electrical (EBIC, SPM,…), and structural (HREM, HAADF/STEM, Atom probe tomography, …)

Invited Speakers:

  • J. Del Alamo (Massachusetts Institute of Technology, USA)
  • S. Fujita (Kyoto University, Japan)
  • J. Jimenez (University of Valladolid, Spain)
  • D. Jung (University of California, Santa Barbara, USA)
  • R. Kaplar (Sandia National Laboratories, USA)
  • G. Meneghesso (University of Padova, Italy)
  • G. Mura (Cagliari, Italy)
  • K. Shono (Transphorm Japan Inc., Japan)
  • Y. Sin (Aerospace Corp, USA)
  • S. Stoffels (imec, Belgium)
  • J. Suda (Kyoto University, Japan)
  • Y. Tominaga (Hiroshima University, Japan)
  • S. Tomiya (Sony Corporation, Japan)
  • H. Tsuchida (CRIEPI, Japan)
  • J. Wuerfl (FBH, Germany)
  • R. Zeisel (OSRAM Optosemiconductors, USA)

Symposium Organizers

Osamu Ueda
Kanazawa Institute of Technology
Graduate School of Engineering
Japan

Robert Herrick
Intel Corporation
Silicon Photonics Organization
USA

Matteo Meneghini
University of Padova
Department of Information Engineering
Italy

Kenji Shiojima
University of Fukui
Graduate School of Electrical and Electronics Engineering
Japan

Topics

compound crystal growth deep level transient spectroscopy (DLTS) defects III-V nitride transmission electron microscopy (TEM) x-ray diffraction (XRD)