Symposium EN15-Novel Materials Physics of Perovskite Semiconductors

Traditional oxide perovskites are usually dielectric materials. The advent of halide perovskites for photovoltaic applications, however, has opened new avenues for research on perovskite materials. The rapid increase in power conversion efficiency of perovskite-based solar cells, added to their low-cost solution-based processing, has led to active research aiming for industry penetration. In parallel to these developments for photovoltaics, other promising applications in light-emitting diodes, semiconductor lasers, and photodetectors are also quickly emerging. It is evident that perovskites have opened the door of using non-traditional semiconductors for mainstream applications, which are currently dominated by group-IV, III-V, and II-VI semiconductors.

As revealed over the past several years, novel physical properties of the hybrid halide perovskites are behind the achievements of these materials. For example, these materials exhibit high defect tolerance so that defect-mediated non-radiative recombination is weaker than radiative recombination. According to recent reports, even the radiative recombination could be significantly reduced by screening effect due to the nearly freely rotating dipolar cations. Understanding such new physics is not only essential to the further development of these materials for applications, but also enriches our knowledge base of semiconductor physics. It is also worthwhile to explore the extent to which the unique physics of the hybrid halide perovskites is still valid in other perovskite and related materials, such as non-halide perovskites, double and Ruddlesden-Popper perovskites, etc. Achieving this goal requires synergetic efforts from synthesis of high-quality materials, delicate characterization of their properties, as well as understanding of the physical processes from theory and computation. This symposium will be dedicated to understanding perovskite semiconductors from their fundamental physics and materials science aspects.

• Materials physics of halide perovskites (photon recycling, carrier-phonon coupling, Rashba effect, etc.)
• Non-halide perovskite semiconductors (chalcogenides, oxynitrides, etc.)
• Perovskite-derived semiconductors (double and Ruddlesden-Popper perovskites, etc)
• Growth and characterization of high-quality single crystals and thin films of the materials above
• Characterization of defects in halide and other perovskite semiconductors
• Synthesis and characterization of physical properties of low-dimensional perovskites
• Theoretical modelling and computational simulation of the materials and properties above

• Hemamala Karunadasa (Stanford University, USA)
• Nam-Gyu Park (Sungkyunkwan University, Republic of Korea)
• Annamaria Petrozza (Istituto Italiano di Tecnologia, Italy)
• Yanfa Yan (University of Toledo, USA)
• Osman M. Bakr (King Abdullah University of Science and Technology, Saudi Arabia)
• Maria K. Y. Chan (Argonne National Laboratory, USA)
• Filippo De Angelis (Institute of Molecular Science and Technologies, Italy)
• Felix Deschler (Cambridge University, United Kingdom)
• Mao-Hua Du (Oak Ridge National Laboratory, USA)
• Prashant V. Kamat (University of Notre Dame, USA)
• Mercouri G. Kanatzidis (Northwestern University, USA)
• Yoshihiko Kanemitsu (Kyoto University, Japan)
• Leeor Kronik (Weizmann Institute of Science, Israel)
• David Mitzi (Duke University, USA)
• Alexandra Navrotsky (University of California, Davis, USA)
• Wanyi Nie (Los Alamos National Laboratory, USA)
• Daniel Niesner (Friedrich-Alexander-Universität Erlangen-Nürnberg, Germany)
• Oleg V. Prezhdo (University of Southern California, USA)
• Yabing Qi (Okinawa Institute of Science and Technology, Japan)
• Peng Qin (Shanghai Institute of Ceramics, China)
• Jian Shi (Rensselaer Polytechnic Institute, USA)
• Henry J. Snaith (Oxford University, United Kingdom)
• Hao Zeng (University at Buffalo, SUNY, USA)
• Lijun Zhang (Jilin University, China)
• Xiaoyang Zhu (Columbia University, USA)