Symposium ES10-Frontiers in Oxide Interface Spintronics—Magnetoelectrics, Multiferroics and Spin-Orbit Effects

Transition metal alloys and, more recently, heavy elemental (4d and 5d) metals have become the strategic elements of spintronic devices and applications. With the recent progress in fabrication and characterization techniques, complex oxide thin films have taken major roles in the frontiers of device physics and engineering. The complex oxides have offered an extremely wide range of properties not realized in conventional metals or semiconductors. For instance, they can exhibit a ferroelectric polar state, magnetic order, metal-insulator transition, colossal magnetoresistance and (predicted) topological insulator phases. In some cases, these properties or order parameters can coexist in single-phase materials, an example being multiferroics: ferroelectric, insulating magnets (anti-ferromagnets).

Due to their correlated nature and multiple degrees of freedom, the properties of this class of materials can be controlled by chemical substitution or by external stimuli such as electric, magnetic and strain fields. Furthermore, spin-orbit effects are the fundamental ingredients, which control magnetoelectric coupling in multiferroics and magnetotransport or magneto-optical effects in spin-Hall or topological insulators. In reduced dimensions, surface phenomena can dominate over bulk and thus become a key tuning parameter. Therefore, heterointerface engineering of complex oxides offers the possibility of the emergence of non-bulk-like exotic phenomena, which could improve or add novel functionalities to spintronics applications. This symposium will focus on the interdisciplinary topics related to the physics, materials science and engineering within the field of spintronics at oxide interfaces.

The topical list for this symposium reflects the materials needs and challenges within the field, with emphasis on the fabrication of thin films and heterostructures, properties, devices, and exploratory materials. Invited speakers will span the breadth of these interdisciplinary topics in order to accelerate the understanding and development of these topics to enable new functionalities in spintronics devices by exploiting the rich physics of complex oxides.

• Growth of functional oxide materials and heterostructures
• Magnetic oxides, multiferroics and magnetoelectrics
• Spin-orbit effects in oxides and heterostructures
• Materials integration: Applications and devices
• Theory and modeling of magnetoelectric behavior and manifestations of the spin-orbit interaction on magnetic/electronic structure
• Electric field control of magnetism, spin torques, and (spin, quantum) Hall effects

• ES10_Frontiers in Oxide Interface Spintronics—Magnetoelectrics, Multiferroics and Spin-Orbit Effects _0 (Advanced Light Source, Lawrence Berkeley National Laboratory, USA)
• ES10_Frontiers in Oxide Interface Spintronics—Magnetoelectrics, Multiferroics and Spin-Orbit Effects _1 (CNRS-Thales, France)
• ES10_Frontiers in Oxide Interface Spintronics—Magnetoelectrics, Multiferroics and Spin-Orbit Effects _2 (CNRS-Thales, France)
• ES10_Frontiers in Oxide Interface Spintronics—Magnetoelectrics, Multiferroics and Spin-Orbit Effects _3 (National University of Singapore, Singapore)
• ES10_Frontiers in Oxide Interface Spintronics—Magnetoelectrics, Multiferroics and Spin-Orbit Effects _4 (Martin Luther University Halle-Wittenberg, Germany)
• ES10_Frontiers in Oxide Interface Spintronics—Magnetoelectrics, Multiferroics and Spin-Orbit Effects _5 (Cornell University, USA)
• ES10_Frontiers in Oxide Interface Spintronics—Magnetoelectrics, Multiferroics and Spin-Orbit Effects _6 (ETH Zurich, Switzerland)
• ES10_Frontiers in Oxide Interface Spintronics—Magnetoelectrics, Multiferroics and Spin-Orbit Effects _7 (University of Geneva, Switzerland)
• ES10_Frontiers in Oxide Interface Spintronics—Magnetoelectrics, Multiferroics and Spin-Orbit Effects _8 (The Pennsylvania State University, USA)
• ES10_Frontiers in Oxide Interface Spintronics—Magnetoelectrics, Multiferroics and Spin-Orbit Effects _9 (University of Twente, Netherlands)
• ES10_Frontiers in Oxide Interface Spintronics—Magnetoelectrics, Multiferroics and Spin-Orbit Effects _10 (University of Nottingham, United Kingdom)
• ES10_Frontiers in Oxide Interface Spintronics—Magnetoelectrics, Multiferroics and Spin-Orbit Effects _11 (University of Tokyo, Japan)
• ES10_Frontiers in Oxide Interface Spintronics—Magnetoelectrics, Multiferroics and Spin-Orbit Effects _12 (University California, Berkeley, USA)
• ES10_Frontiers in Oxide Interface Spintronics—Magnetoelectrics, Multiferroics and Spin-Orbit Effects _13 (Tsinghua University, China)
• ES10_Frontiers in Oxide Interface Spintronics—Magnetoelectrics, Multiferroics and Spin-Orbit Effects _14 (Seoul National University, Republic of Korea)
• ES10_Frontiers in Oxide Interface Spintronics—Magnetoelectrics, Multiferroics and Spin-Orbit Effects _15 (Massachusetts Institute of Technology, USA)
• ES10_Frontiers in Oxide Interface Spintronics—Magnetoelectrics, Multiferroics and Spin-Orbit Effects _16 (University California, Berkeley, USA)
• ES10_Frontiers in Oxide Interface Spintronics—Magnetoelectrics, Multiferroics and Spin-Orbit Effects _17 (Stanford University, USA)
• ES10_Frontiers in Oxide Interface Spintronics—Magnetoelectrics, Multiferroics and Spin-Orbit Effects _18 (Tohoku University, Japan)
• ES10_Frontiers in Oxide Interface Spintronics—Magnetoelectrics, Multiferroics and Spin-Orbit Effects _19 (Aalto University, Finland)
• ES10_Frontiers in Oxide Interface Spintronics—Magnetoelectrics, Multiferroics and Spin-Orbit Effects _20 (Universidad Complutense de Madrid, Spain)
• ES10_Frontiers in Oxide Interface Spintronics—Magnetoelectrics, Multiferroics and Spin-Orbit Effects _21 (Nanjing University, China)
• ES10_Frontiers in Oxide Interface Spintronics—Magnetoelectrics, Multiferroics and Spin-Orbit Effects _22 (Carnegie Mellon University, USA)
• ES10_Frontiers in Oxide Interface Spintronics—Magnetoelectrics, Multiferroics and Spin-Orbit Effects _23 (The Ohio State University, USA)