Symposium ED7-Materials and Device Engineering for Beyond the Roadmap Devices in Logic, Memory and Power

The scaling of silicon MOSFETs, DRAM, and Flash memory has already required the use for finFETS, high-k dielectrics and SiGe stressors and there is active research in tunnelFETs. Further progress requires new materials and new device design engineering. For future MOSFET logic devices and power MOSFETs, novel channel materials such as broken-gap semiconductor heterostructures, transition metal dichalcogenides (TMD), and related materials are being investigated along with novel gates such as ferroelectrics and spin-based materials. Future non-volatile memory includes phase change memory with multistate gates, ferroelectrics, and 3D structures. This symposium will emphasize not only the advances in materials but also the new device structures that are required for the new materials to provide substantial improvements in device performance.

• High conductivity sources and drains for future MOSFETS
• Electrical reliability of nanoscale devices and its modeling
• Materials and mechanisms of Resistive RAM
• Fabrication techniques for three dimensional devices
• Negative capacitance and ferroelectric materials and devices
• Unconventional transistors, switch/memory designs including tunnel FETs, TMD heterostructure FETs, spinFETS, 3D transistors
• High-k dielectrics, oxide stacks, and metal gates for SiGe, Ge, III-V, GaN, TMD, graphene, DRAM and flash memory
• Engineering of band offsets, dielectric behavior, and work function control
• Gate-stack materials and interfaces for future switches and memory
• Integration techniques for low dimensional materials into 3D devices
• Surface pretreatments and cleaning of non-Si channel materials

• ED7_Materials and Device Engineering for Beyond the Roadmap Devices in Logic, Memory and Power _0 (University of California, Santa Barbara, USA)
• ED7_Materials and Device Engineering for Beyond the Roadmap Devices in Logic, Memory and Power _1 (TEL, USA)
• ED7_Materials and Device Engineering for Beyond the Roadmap Devices in Logic, Memory and Power _2 (IBM, Switzerland)
• ED7_Materials and Device Engineering for Beyond the Roadmap Devices in Logic, Memory and Power _3 (University of Notre Dame, USA)
• ED7_Materials and Device Engineering for Beyond the Roadmap Devices in Logic, Memory and Power _4 (University of California, Berkeley, USA)
• ED7_Materials and Device Engineering for Beyond the Roadmap Devices in Logic, Memory and Power _5 (Global Foundaries, USA)
• ED7_Materials and Device Engineering for Beyond the Roadmap Devices in Logic, Memory and Power_6 (National Taiwan Normal University, Taiwan)
• ED7_Materials and Device Engineering for Beyond the Roadmap Devices in Logic, Memory and Power _7 (National Taiwan University, Taiwan)
• ED7_Materials and Device Engineering for Beyond the Roadmap Devices in Logic, Memory and Power _8 (National Institute of Advanced Industrial Science and Technology, Japan)
• ED7_Materials and Device Engineering for Beyond the Roadmap Devices in Logic, Memory and Power _9 (Samsung, Republic of Korea)
• ED7_Materials and Device Engineering for Beyond the Roadmap Devices in Logic, Memory and Power _10 (Intel, USA)
• ED7_Materials and Device Engineering for Beyond the Roadmap Devices in Logic, Memory and Power _11 (The Pennsylvania State University, USA)
• ED7_Materials and Device Engineering for Beyond the Roadmap Devices in Logic, Memory and Power _12 (Dresden University of Technology, Germany)
• ED7_Materials and Device Engineering for Beyond the Roadmap Devices in Logic, Memory and Power _13 (Australia National University, USA)
• ED7_Materials and Device Engineering for Beyond the Roadmap Devices in Logic, Memory and Power _14 (Tokyo University, Japan)
• ED7_Materials and Device Engineering for Beyond the Roadmap Devices in Logic, Memory and Power _15 (University of Texas at Dallas, USA)
• ED7_Materials and Device Engineering for Beyond the Roadmap Devices in Logic, Memory and Power _16 (Aachen University, Germany)
• ED7_Materials and Device Engineering for Beyond the Roadmap Devices in Logic, Memory and Power _17 (Cornell University, USA)