Symposium ED3-Physics, Chemistry and Materials for Beyond Silicon Electronics

For more than four decades, silicon has been used as the material to fabricate integrated circuits which are now ubiquitously used in almost all electronic products. Today, the market demands electronic chips that are significantly more power efficient and more diverse in functionalities. To meet these challenges, new materials such as III-V, Ge, GaN, SiC, graphene and transition metal dichalcogenides are being investigated for logic, memory, power and photonic applications, with the aim of integrating multiple functional blocks on the chip . A multidisciplinary effort is ongoing worldwide to explore and evaluate new materials systems. This symposium seeks to convene scientists and engineers working on various aspects of these new materials; physics, chemistry, growth, interfaces, doping, metallization, process integration and characterization to discuss their outstanding fundamentals and bottleneck issues.

Contributed abstracts in this symposium will be highlighted by invited speakers from both academia and industry to accelerate the progress in this field for the adoption of new materials in beyond silicon electronics.

• Theory and modeling of materials for beyond Si electronics (logic, memory, power and photonics)
• Structural, optical and transport properties for III-V, Ge, GaN, SiC, graphene and TMD
• Approaches to growth for III-V, Ge, GaN, SiC, graphene and TMD: MBE, MOCVD, CVD and ALD
• Surface treatments and chemical functionalization of non-silicon materials
• Metal contacts to non-silicon semiconductors including materials, interfaces and doping
• Gate-stack materials and interfaces on non-silicon semiconductors including High K dielectrics, oxide stacks and metal gates

• ED3_Physics, Chemistry and Materials for Beyond Silicon Electronics_0 (Rensselaer Polytechnic Institute, USA)
• ED3_Physics, Chemistry and Materials for Beyond Silicon Electronics_1 (Universita di Pisa, Italy)
• ED3_Physics, Chemistry and Materials for Beyond Silicon Electronics_2 (Aixtron, USA)
• ED3_Physics, Chemistry and Materials for Beyond Silicon Electronics_3 (Harvard University, USA)
• ED3_Physics, Chemistry and Materials for Beyond Silicon Electronics_4 (University of Minnesota, USA)
• ED3_Physics, Chemistry and Materials for Beyond Silicon Electronics_5 (ETH Zurich, Switzerland)
• ED3_Physics, Chemistry and Materials for Beyond Silicon Electronics_6 (University of California, Berkeley, USA)
• ED3_Physics, Chemistry and Materials for Beyond Silicon Electronics_7 (Suny Poly Sematech, USA)
• ED3_Physics, Chemistry and Materials for Beyond Silicon Electronics_8 (George Washington University, USA)
• ED3_Physics, Chemistry and Materials for Beyond Silicon Electronics_9 (IBM Zurich, Switzerland)
• ED3_Physics, Chemistry and Materials for Beyond Silicon Electronics_10 (Purdue University, USA)
• ED3_Physics, Chemistry and Materials for Beyond Silicon Electronics_11 (Sungkyunkwan University, Republic of Korea)
• Xia Fengnian (Yale University, USA)