Symposium ED11-Phase-Change Materials and Their Applications—Memories, Photonics, Displays and Non-von Neumann Computing

The remarkable properties characteristic of phase change materials (PCMs) make them the most interesting candidates for emerging applications in memories, photonics, displays, ovonic threshold switch selectors, and non von Neumann computing. Nanoscale volumes of PCMs can be rapidly switched between structural phases with distinct optical and electrical properties, by employing sub-nanosecond laser or electrical pulses.Typical phase change materials are chalcogenide alloys but other, non-traditional compositions, such as GaSb, VO₂ or 2-dimensional MoTe₂ have been of renewed interest because they also exhibit reversible phase transitions, with high contrast in macroscopic properties. To succesfully employ these advanced functional materials in a broad range of applications, a number of challenges need to be overcome. These include device integration issues, novel device architectures, increase in the storage density, and reliability. Solutions require both technological advances, as well as a deeper understanding of the fundamental material physics. Moreover, while the crystalline and the amorphous phase are usually adopted as functional states, switching between two crystalline phases or between a metallic and insulating state has been also proposed as a key mechanism for new possible applications.

This symposium will cover advances in devices for optical and electronic applications, as well as in material science. It will bring together the technological and scientific communities, being of interest to electronics and process engineers, physicists, chemist and materials scientists working on emerging electronics, including novel nanoscale integration with 2D materials and also nanophotonics and plasmonics. The symposium is designed to be a synergistic event that allows exchange of novel ideas and knowledge-base to propel progress in this important scientific field.

Topics will include:

Physics and materials science of phase change materials
Biology-inspired / neuromorphic devices
Phase change materials for reconfigurable logic applications
Device integration and performance, low power devices
Processing issues in device fabrication
Phase change materials in photonic memories and displays
Optical and thermal properties of phase change materials
Multi-level storage
Reduced dimensionality structures of phase change materials
Layered and superlattice phase change materials
Topological insulating properties of phase change materials
Application of phase change materials to PCRAM devices and optical storage
Theory and Computer simulations of structural and electronic processes in phase change materials
Concepts and enabling technologies for 3D memory, OTS devices
Integration of phase change materials into hybrid nanostructures

Invited Speakers:

ED11_Phase-Change Materials and Their Applications—Memories, Photonics, Displays and Non-von Neumann Computing _0 (Paul Drude Institute, Berlin, Germany)
ED11_Phase-Change Materials and Their Applications—Memories, Photonics, Displays and Non-von Neumann Computing _1 (Micron, Italy)
ED11_Phase-Change Materials and Their Applications—Memories, Photonics, Displays and Non-von Neumann Computing _2 (University of Tsukuba, Japan)
ED11_Phase-Change Materials and Their Applications—Memories, Photonics, Displays and Non-von Neumann Computing _3 (Bodle Technologies, United Kingdom)
ED11_Phase-Change Materials and Their Applications—Memories, Photonics, Displays and Non-von Neumann Computing _4 (Politecnico di Milano, Italy)
ED11_Phase-Change Materials and Their Applications—Memories, Photonics, Displays and Non-von Neumann Computing _5 (IBM, Zurich, Switzerland)
ED11_Phase-Change Materials and Their Applications—Memories, Photonics, Displays and Non-von Neumann Computing _6 (Stanford University, USA)
ED11_Phase-Change Materials and Their Applications—Memories, Photonics, Displays and Non-von Neumann Computing _7 (Indian Institute of Technology Indore, India)
ED11_Phase-Change Materials and Their Applications—Memories, Photonics, Displays and Non-von Neumann Computing _8 (RWTH Aachen University, Germany)
ED11_Phase-Change Materials and Their Applications—Memories, Photonics, Displays and Non-von Neumann Computing _9 (Physikalisches Institut,RWTH Aachen University, Germany)
ED11_Phase-Change Materials and Their Applications—Memories, Photonics, Displays and Non-von Neumann Computing _10 (Institute of Photonic Science, Barcelona, Spain)
ED11_Phase-Change Materials and Their Applications—Memories, Photonics, Displays and Non-von Neumann Computing _11 (Stanford University, USA)
ED11_Phase-Change Materials and Their Applications—Memories, Photonics, Displays and Non-von Neumann Computing _12 (Singapore University of Technology and Design, Singapore)
ED11_Phase-Change Materials and Their Applications—Memories, Photonics, Displays and Non-von Neumann Computing _13 (CEA, Leti, France)
ED11_Phase-Change Materials and Their Applications—Memories, Photonics, Displays and Non-von Neumann Computing _14 (Brown University, Providence, USA)