2016 MRS Spring Meeting
Symposium NT2-Oxide and Chalcogenide-Based Thin Films and Nanostructures for Electronics and Energy Applications
This symposium will focus on thin films and nanostructures of oxide and chalcogenide-based materials for electronics and energy applications. While usage of these materials in the bulk is well established, there are exciting new opportunities for exploiting their unique properties in reduced dimensions. As the characteristic dimensions of these materials systems shrink into the nanometer range, there are increased technological challenges for synthesis, processing and characterization to ensure high uniformity, reproducibility, and cost reduction. Many scientific questions regarding the role of interfaces, defects, composition, stress and size effects on their properties and functionalities are still to be answered. Moreover, the industry demand for increased miniaturization, larger integration, and higher operation speed, and excellent reliability, lower cost and new functionalities has generated a significant interest in exploiting the unique properties of these two classes of materials for electronic, magnetic, optical, energy, catalytic, sensor and biomedical applications. The symposium will serve as an active platform for researchers working in the area of oxide and chalcogenide-based materials to share their results that could enable them to take their research to next level and possibly integrate the two classes of materials for realizing novel properties. This symposium will closely follow the progress in research related to oxide and chalcogenide-based thin films and nanostructures, with a focus on emergent electronic and energy applications. The aspects treated in this symposium range from material growth and properties up to material application in devices.
Topics will include:
- Thin-film growth models and experiments
- Defect chemistry and doping of chalcogenide semiconductors
- Interfaces and grain boundaries
- Chalcogenide window and buffer layers
- Defect physics and device analysis
- Issues of large-area film manufacturing
- Fabrication of solar modules
- Films for SOFC and battery applications
- Topological insulators
- Semiconducting, conducting, and superconducting oxides
- Materials synthesis and design of oxide and chalcogenide-based thin films and nanomaterials materials
- Material combinations, heterostructures and nanostructured composites
- Piezoelectric/electrostrictive oxides for MEMS, acoustic wave devices, sensors, and actuators
- Spintronics, magnetic oxide bulk and thin films (giant/colossal magnetoresistance), superparamagnetic materials and their applications
Invited Speakers:
- NT2_Oxide and Chalcogenide-Based Thin Films and Nanostructures for Electronics and Energy Applications _0 (Purdue University, USA)
- NT2_Oxide and Chalcogenide-Based Thin Films and Nanostructures for Electronics and Energy Applications _1 (University of Grenoble, France)
- NT2_Oxide and Chalcogenide-Based Thin Films and Nanostructures for Electronics and Energy Applications _2 (Max Planck Institute, Germany)
- NT2_Oxide and Chalcogenide-Based Thin Films and Nanostructures for Electronics and Energy Applications _3 (Peking University, China)
- NT2_Oxide and Chalcogenide-Based Thin Films and Nanostructures for Electronics and Energy Applications _4 (Tokyo University, Japan)
- NT2_Oxide and Chalcogenide-Based Thin Films and Nanostructures for Electronics and Energy Applications _5 (University of Illinois, USA)
- NT2_Oxide and Chalcogenide-Based Thin Films and Nanostructures for Electronics and Energy Applications _6 (Duke University, USA)
- NT2_Oxide and Chalcogenide-Based Thin Films and Nanostructures for Electronics and Energy Applications _7 (North Carolina State University, USA)
- NT2_Oxide and Chalcogenide-Based Thin Films and Nanostructures for Electronics and Energy Applications _8 (Bielefeld University, Germany)
- NT2_Oxide and Chalcogenide-Based Thin Films and Nanostructures for Electronics and Energy Applications _9 (Massachusetts Institute of Technology, USA)
- NT2_Oxide and Chalcogenide-Based Thin Films and Nanostructures for Electronics and Energy Applications _10 (IBM, USA)