2016 MRS Spring Meeting
Symposium EP6-Integration of Heterovalent Semiconductors and Devices
Heterovalent semiconductor structures based on combinations of IV, II-VI and III-V materials enable the monolithic integration of many kinds of electronic and optoelectronic devices onto a single substrate, thus offering potentially transformative impact on future semiconductor devices and integrated circuits and their functionalities. The platform has unique properties such as lattice-matching to a single substrate, bandgap-energy coverage of a broad optical spectrum ranging from near-UV to far-infrared, and very high electron and hole mobilities. These properties are also ideal for electronic and optoelectronic devices such as FETs and photo-detectors. Structures composed of these materials have an unexplored richness of structural and electronic properties based on the heterovalent nature of their interfaces and synthetically introduced additional periodicities, such as superlattices. This symposium will cover the underlying fundamental physics and chemistry of heterovalent semiconductors and their interfaces, including structural, magnetic, transport, optical and doping properties, as well as opportunities for integration into novel electronic and optoelectronic devices.
Interdisciplinary topics related to the physics, chemistry, materials science and engineering of heterovalent semiconductors and their interfaces will be highlighted by invited talks in order to accelerate the exploitation of these materials into real-world device applications.
Topics will include:
- Theory and modeling of heterovalent interfaces
- Electronic structure and band offsets
- Approaches to growth, including MBE, MOCVD, CVD and ALD
- Structural, optical and transport properties
- Applications and integration into novel devices
Invited Speakers:
- EP6_Integration of Heterovalent Semiconductors and Devices_0 (Rensselaer Polytechnic Institute, USA)
- EP6_Integration of Heterovalent Semiconductors and Devices_1 (U.S. Army Research Laboratory, USA)
- EP6_Integration of Heterovalent Semiconductors and Devices_2 (Georgia Institute of Technology, USA)
- EP6_Integration of Heterovalent Semiconductors and Devices_3 (CINVESTAV-IPN, Mexico)
- EP6_Integration of Heterovalent Semiconductors and Devices_4 (Paul-Drude Institut, Germany)
- EP6_Integration of Heterovalent Semiconductors and Devices_5 (Texas State University, USA)
- EP6_Integration of Heterovalent Semiconductors and Devices_6 (University of Illinois at Chicago, USA)
- EP6_Integration of Heterovalent Semiconductors and Devices_7 (National Renewable Energy Laboratory, USA)
- EP6_Integration of Heterovalent Semiconductors and Devices_8 (Cornell University, USA)
- EP6_Integration of Heterovalent Semiconductors and Devices_9 (University of Colorado Boulder, USA)