Symposium EP2-Silicon Carbide—Substrates, Epitaxy, Devices, Circuits and Graphene

Advances in silicon carbide materials, processing, and device design have recently resulted in the implementation of SiC-based electronics for high voltage, high temperature, and high frequency applications. This symposium will focus on new developments in basic science of SiC materials as well as rapidly maturing device and circuit technologies. The challenges in this field include understanding and decreasing defect densities in bulk SiC crystals, controlling morphology and residual impurities in homo- and hetero-epilayers, optimization of implant activation and oxide-SiC interfaces, and developing novel device structures and integrated circuits.

This symposium will bring together the crystal growers, materials engineers, modelers, physicists, and device experts needed to continue the rapid pace of silicon carbide-based technology.

• Devices for efficient power conversion
• Integrated circuits for harsh environments
• SiC sensors and biomedical applications
• Graphene from SiC
• Improved ohmic and rectifying contacts
• Surfaces and interfaces
• Oxidation and alternative dielectric materials
• Bulk SiC growth (including large diameter crystals), modeling, and characterization
• Homo- and hetero-epitaxial growth (doping control, carrier lifetimes, etc.)

• EP2_Silicon Carbide—Substrates, Epitaxy, Devices, Circuits and Graphene _0 (Oak Ridge National Laboratory, USA)
• EP2_Silicon Carbide—Substrates, Epitaxy, Devices, Circuits and Graphene _1 (Monash University, Australia)
• EP2_Silicon Carbide—Substrates, Epitaxy, Devices, Circuits and Graphene _2 (National Tsing Hua University, Taiwan)
• EP2_Silicon Carbide—Substrates, Epitaxy, Devices, Circuits and Graphene _3 (Linkoeping University, Sweden)
• EP2_Silicon Carbide—Substrates, Epitaxy, Devices, Circuits and Graphene _4 (NASA Glenn Center, USA)
• EP2_Silicon Carbide—Substrates, Epitaxy, Devices, Circuits and Graphene _5 (Ascatron, Sweden)
• EP2_Silicon Carbide—Substrates, Epitaxy, Devices, Circuits and Graphene _6 (Tohoku University, Japan)
• EP2_Silicon Carbide—Substrates, Epitaxy, Devices, Circuits and Graphene _7 (GeneSiC, USA)
• EP2_Silicon Carbide—Substrates, Epitaxy, Devices, Circuits and Graphene _8 (Central Research Institute of Electric Power Industry, Japan)
• EP2_Silicon Carbide—Substrates, Epitaxy, Devices, Circuits and Graphene _9 (Washington State University, USA)
• EP2_Silicon Carbide—Substrates, Epitaxy, Devices, Circuits and Graphene _10 (NovaSiC, France)