Symposium EP11-Novel Materials for End-of-Roadmap Devices in Logic, Power and Memory

The scaling of silicon MOSETs, DRAM, and Flash memory has already required the use for high-k dielectrics and the trend is expected to continue. Present Si MOSFETs employ high-K dielectrics, metal gates, and strain-engineered layers. Further progress requires new semiconductor channel materials and new device structures. For future MOSFET logic devices and power MOSFETs, novel channel materials such as III-V, Ge, SiGe, GaN, and transition metal dichalcogenides are being investigated. Tunnel FETs are one alternative device structure. Future non-volatile memory includes resistive RAM, phase change, and 3D Flash memory. This symposium will emphasize not only the advances in materials but also the new device structures that are required for the new materials to provide substantial improvements in device performance.

Topics will include:

High conductivity sources and drains for future MOSFETS
Electrical reliability of nanoscale devices and its modeling
Device structures and materials SiGe, Ge, III-Vs, GaN, SiC
Gate-stack materials and interfaces for future MOSFET
High-k dielectrics, bilayer oxide stack, and metal gates for SiGe, Ge, III-V, GaN, SiC, and Memory
Modeling of the physics and chemistry of defects in dielectrics
Modeling of band offsets, dielectric behavior, and work function control
Unconventional transistor designs including tunnel-FETS, 3D transistor and memory
High-k dielectrics for memories: Flash and DRAM, 3D Flash
Surface pretreatments and chemical cleaning of non-Si channel materials

Invited Speakers:

EP11_Novel Materials for End-of-Roadmap Devices in Logic, Power and Memory _0 (IBM, USA)
EP11_Novel Materials for End-of-Roadmap Devices in Logic, Power and Memory _1 (Purdue University, USA)
EP11_Novel Materials for End-of-Roadmap Devices in Logic, Power and Memory _2 (University of Texas at Austin, USA)
EP11_Novel Materials for End-of-Roadmap Devices in Logic, Power and Memory _3 (Stanford University, USA)
EP11_Novel Materials for End-of-Roadmap Devices in Logic, Power and Memory _4 (Tohoku University, USA)
EP11_Novel Materials for End-of-Roadmap Devices in Logic, Power and Memory _5 (IMEC, Belgium)
EP11_Novel Materials for End-of-Roadmap Devices in Logic, Power and Memory _6 (University of Pittsburgh, USA)
EP11_Novel Materials for End-of-Roadmap Devices in Logic, Power and Memory _7 (Cambridge University, United Kingdom)
EP11_Novel Materials for End-of-Roadmap Devices in Logic, Power and Memory _8 (Cornell University, USA)
EP11_Novel Materials for End-of-Roadmap Devices in Logic, Power and Memory _9 (University of Texas at Dallas, USA)
EP11_Novel Materials for End-of-Roadmap Devices in Logic, Power and Memory _10 (Stanford University, USA)
EP11_Novel Materials for End-of-Roadmap Devices in Logic, Power and Memory _11 (Arizona State University, USA)
EP11_Novel Materials for End-of-Roadmap Devices in Logic, Power and Memory _12 (Micron Corp, USA)
EP11_Novel Materials for End-of-Roadmap Devices in Logic, Power and Memory _13 (IBM Research - Zurich, Switzerland)
EP11_Novel Materials for End-of-Roadmap Devices in Logic, Power and Memory _14 (Nagoya University, Japan)
EP11_Novel Materials for End-of-Roadmap Devices in Logic, Power and Memory _15 (GlobalFoundries, USA)
EP11_Novel Materials for End-of-Roadmap Devices in Logic, Power and Memory _16 (RWTH Aachen University, Germany)