November 27 - December 2, 2016
Boston, Massachusetts
2016 MRS Fall Meeting

Symposium EM5-Materials and Mechanisms of Correlated Electronic Phenomena in Oxide Heterostructures

The objective of this symposium is to address the materials and mechanisms of correlated electronic phenomena that arise in artificial transition-metal oxide (TMO) heterostructures due to strong electron-electron and/or electron-lattice interactions. Heterostructures and multilayers with atomically abrupt interfaces between complex TMOs are becoming available as a result of recent developments in thin-film-fabrication techniques. Such synthetic structures display properties that are dramatically different from those of the constituent oxides in their bulk forms. Advanced microscopy and spectroscopy techniques enable fundamental understanding of such heterostructures; particularly the emergence of novel electronic, magnetic, photonic and topological phenomena driven by correlation effects, broken symmetries, interfacial doping and interface induced structural modifications. Correlated electrons in TMO interfaces often induce metal-insulator transition, superconductivity and magnetism. These phase transitions can be tuned by external stimuli such as electric and magnetic fields and pressure, which makes oxide interfaces particularly interesting not only from the point of view of basic science but also as important ingredients in novel electronic devices. Of particular interest are digital interfaces that can be used in future applications such as spin-controlled electronics (spintronics) and quantum computation. Other fascinating examples are interfaces where multiple orders may coexist such as superconductivity with magnetism resulting in an exotic symmetry of the superconducting order-parameter, and ferromagnetism with ferroelectricity with a significant degree of coupling between the two order parameters. Interface designs have proven critical in enhancing macroscopic interdependent orders and their tunability. In addition to widely-studied 3d TMO heteostructures, 4d, 5d and 4f systems are also covered. In these systems, one could even anticipate novel phenomena due to the increased spin-orbit coupling, which competes or cooperates with correlation effects.

Topics will include:

  • Atomic scale structure and chemistry of oxide interfaces probed with x-ray, electron and neutron scattering techniques.
  • Electronic structure of oxide interfaces probed with photoemission, electron and x-ray spectroscopies.
  • Optoelectronic response of oxide based two-dimensional electron gas (2DEG) systems – photoconductivity, photoluminescence, electroluminescence and related phenomena.
  • Low temperature electronic transport in high mobility 2DEG systems – conductance oscillations, anisotropic magnetoresistance and effects of spin-orbit interaction.
  • Simulations, modeling and predictions of atomic and electronic structure of oxide interfaces.
  • Nanoscale sculpturing of oxide 2DEG: electronic transport under dimensional constraints.
  • New oxide interfaces based on 4d, 5d and 4f elements displaying superconductivity and ordered magnetism.

Invited Speakers:

  • EM5_Materials and Mechanisms of Correlated Electronic Phenomena in Oxide Heterostructures _0 (University of California, Santa Barbara, USA)
  • EM5_Materials and Mechanisms of Correlated Electronic Phenomena in Oxide Heterostructures _1 (Argonne National Laboratory, USA)
  • EM5_Materials and Mechanisms of Correlated Electronic Phenomena in Oxide Heterostructures _2 (CNRS-Thales, France)
  • EM5_Materials and Mechanisms of Correlated Electronic Phenomena in Oxide Heterostructures _3 (University of Wisconsin, USA)
  • EM5_Materials and Mechanisms of Correlated Electronic Phenomena in Oxide Heterostructures _4 (Argonne National Laboratory, USA)
  • EM5_Materials and Mechanisms of Correlated Electronic Phenomena in Oxide Heterostructures _5 (Vienna University of Technology, Austria)
  • EM5_Materials and Mechanisms of Correlated Electronic Phenomena in Oxide Heterostructures _6 (University of Twente, Netherlands)
  • EM5_Materials and Mechanisms of Correlated Electronic Phenomena in Oxide Heterostructures _7 (Stanford University, USA)
  • EM5_Materials and Mechanisms of Correlated Electronic Phenomena in Oxide Heterostructures _8 (Bar-Ilan University, Israel)
  • EM5_Materials and Mechanisms of Correlated Electronic Phenomena in Oxide Heterostructures _9 (University of Tokyo, Japan)
  • EM5_Materials and Mechanisms of Correlated Electronic Phenomena in Oxide Heterostructures _10 (ESPCI Paris Tech, France)
  • EM5_Materials and Mechanisms of Correlated Electronic Phenomena in Oxide Heterostructures _11 (University of Pittsburgh, USA)
  • EM5_Materials and Mechanisms of Correlated Electronic Phenomena in Oxide Heterostructures _12 (Cambridge University, United Kingdom)
  • EM5_Materials and Mechanisms of Correlated Electronic Phenomena in Oxide Heterostructures _13 (MPI-Stuttgart, Germany)
  • EM5_Materials and Mechanisms of Correlated Electronic Phenomena in Oxide Heterostructures _14 (RIKEN, Japan)
  • EM5_Materials and Mechanisms of Correlated Electronic Phenomena in Oxide Heterostructures _15 (Cornell University, USA)
  • EM5_Materials and Mechanisms of Correlated Electronic Phenomena in Oxide Heterostructures _16 (Seoul National University, Republic of Korea)
  • EM5_Materials and Mechanisms of Correlated Electronic Phenomena in Oxide Heterostructures _17 (University of Duisburg-Essen, Germany)
  • EM5_Materials and Mechanisms of Correlated Electronic Phenomena in Oxide Heterostructures _18 (Technical University of Denmark, Denmark)
  • EM5_Materials and Mechanisms of Correlated Electronic Phenomena in Oxide Heterostructures _19 (Tohuku University, Japan)
  • EM5_Materials and Mechanisms of Correlated Electronic Phenomena in Oxide Heterostructures _20 (Université Paris-Sud, France)
  • EM5_Materials and Mechanisms of Correlated Electronic Phenomena in Oxide Heterostructures _21 (University of British Columbia, Canada)
  • EM5_Materials and Mechanisms of Correlated Electronic Phenomena in Oxide Heterostructures _22 (University of California Santa Barbara, USA)
  • EM5_Materials and Mechanisms of Correlated Electronic Phenomena in Oxide Heterostructures _23 (Tsinghua University, China)

Symposium Organizers

Ramesh C Budhani
Indian Institute of Technology Kanpur
Department of Physics
India

Yoram Dagan
Tel Aviv University
School of Physics and Astronomy
Israel

Lena F Kourkoutis
Cornell University
Applied and Engineering Physics
USA

Satoshi Okamoto
Oak Ridge National Laboratory
Materials Science and Technology Division
USA

Topics

luminescence magnetoresistance (transport) metal-insulator transition nanoscale oxide photoconductivity scanning tunneling microscopy (STM) thin film transmission electron microscopy (TEM) x-ray photoelectron spectroscopy (XPS)