Apr 10, 2025
5:00pm - 7:00pm
Summit, Level 2, Flex Hall C
Praveen Kumar1,Parna Maity1,Bhanu Khatua1,Prasana Sahoo1
Indian Institute of Technology Kharagpur1
Praveen Kumar1,Parna Maity1,Bhanu Khatua1,Prasana Sahoo1
Indian Institute of Technology Kharagpur1
Two-dimensional transition metal dichalcogenides (2D TMDs) have garnered significant attention for their unique structural, electrical, and optical properties, which make them promising materials for energy harvesting applications. This study explores the continuous synthesis of layered-controlled MoSe
2 films over centimeter-scale areas using the atmospheric pressure chemical vapour deposition (APCVD) method using selenium and molybdenum trioxide as solid precursors. Using optical microscopy, atomic force microscopy, and Raman spectroscopy, we characterized the as-synthesized 2D MoSe
2 films. Remarkably, we achieved large-area MoSe
2 growth on SiO
2/Si substrates across different precursor amounts. However, the surface morphology, thickness, and crystallite size of MoSe
2 domains were significantly influenced by the precursor quantity. Furthermore, we investigate the piezoelectric properties of CVD grown monolayer and multilayer MoSe
2 films. Our findings indicate that the monolayer MoSe
2 film has an exceptional piezoelectric output voltage of about 2.6 V, while the multilayer MoSe
2 film has about 4.3 V. This work highlights the potential for optimizing 2D MoSe
2 layer number for improved energy harvesting applications.