Crystal Growth and Characterization of Ta_0.8Hf_0.2C, an Ideal Substrate for Al/GaN High Power Electronics

Apr 9, 2025
5:00pm - 7:00pm

Summit, Level 2, Flex Hall C

Evan Crites

Joshua Hummel

Satya Kushwaha

MVS Chandrashekhar

Michael Spencer

Tyrel McQueen

Evan Crites¹,Joshua Hummel¹,Satya Kushwaha¹,MVS Chandrashekhar²,Michael Spencer²,Tyrel McQueen¹

Johns Hopkins University¹,Morgan State University²

chemical vapor deposition (CVD) (chemical reaction)

Robert Kaplar, Sandia National Laboratories

Filip Tuomisto, University of Helsinki

Motoaki Iwaya, Meijo University

Sriram Krishnamoorthy, University of California, Santa Barbara

Silver
Taiyo Nippon Sanso

Robert Kaplar

Sriram Krishnamoorthy

Crystal Growth and Characterization of Ta0.8Hf0.2C, an Ideal Substrate for Al/GaN High Power Electronics