April 7 - 11, 2025
Seattle, Washington
Symposium Supporters
2025 MRS Spring Meeting & Exhibit
CH02.09.03

Investigating Defect Formation in MoS2 Under DC Bias—Insights from Electrical and Surface Characterization Techniques for Next-Generation Electronics

When and Where

Apr 10, 2025
2:30pm - 2:45pm
Summit, Level 3, Room 343

Presenter(s)

Co-Author(s)

Colby Evans1,Elisabeth Mansfield1,Jason Holm1,Pavel Kabos1,Jason Killgore1

National Institute of Standards and Technology1

Abstract

Colby Evans1,Elisabeth Mansfield1,Jason Holm1,Pavel Kabos1,Jason Killgore1

National Institute of Standards and Technology1
Next-generation electronic devices demand novel materials and innovative engineering approaches to address scaling challenges. Transition metal dichalcogenides (TMDs), such as molybdenum disulfide (MoS2), are promising candidates to address both challenges due to their atomically thin structure and favorable electronic characteristics. However, a recent study has demonstrated that a DC bias can induce defects in MoS2, yet the nature of these defects and their influence on device performance remain unclear. Understanding defect formation is critical for optimizing the reliability and functionality of MoS2-based devices in advanced electronics. We combine electrical characterization (linear sweep voltammetry, chronopotentiometry, and chronoamperometry) with surface characterization (scanning electron microscopy (SEM), atomic force microscopy (AFM), Kelvin probe force microscopy (KPFM), and scanning microwave microscopy (SMM)) to understand how topography, microstructure, and electrostatic properties evolve in MoS2-based electronic test structures under potential failure conditions (strong DC bias). Topographical and electrostatic changes are heterogenous within the MoS2 flake on individual test structures, and among the population of test structures. There are noticeable changes observed by SEM, AFM, KPFM, and SMM after DC bias in some cases, while other test structures are not impacted during electronic tests. Connections between surface and electrostatic changes to device performance will be discussed.

Keywords

2D materials | defects

Symposium Organizers

Tze Chien Sum, Nanyang Technological University
Yuanyuan Zhou, Hong Kong University of Science and Technology
Burak Guzelturk, Argonne National Laboratory
Mengxia Liu, Yale University

Symposium Support

Bronze
Ultrafast Systems LLC

Session Chairs

Burak Guzelturk
Mengxia Liu

In this Session