Apr 10, 2025
2:30pm - 2:45pm
Summit, Level 3, Room 343
Colby Evans1,Elisabeth Mansfield1,Jason Holm1,Pavel Kabos1,Jason Killgore1
National Institute of Standards and Technology1
Colby Evans1,Elisabeth Mansfield1,Jason Holm1,Pavel Kabos1,Jason Killgore1
National Institute of Standards and Technology1
Next-generation electronic devices demand novel materials and innovative engineering approaches to address scaling challenges. Transition metal dichalcogenides (TMDs), such as molybdenum disulfide (MoS
2), are promising candidates to address both challenges due to their atomically thin structure and favorable electronic characteristics. However, a recent study has demonstrated that a DC bias can induce defects in MoS
2, yet the nature of these defects and their influence on device performance remain unclear. Understanding defect formation is critical for optimizing the reliability and functionality of MoS
2-based devices in advanced electronics. We combine electrical characterization (linear sweep voltammetry, chronopotentiometry, and chronoamperometry) with surface characterization (scanning electron microscopy (SEM), atomic force microscopy (AFM), Kelvin probe force microscopy (KPFM), and scanning microwave microscopy (SMM)) to understand how topography, microstructure, and electrostatic properties evolve in MoS
2-based electronic test structures under potential failure conditions (strong DC bias). Topographical and electrostatic changes are heterogenous within the MoS
2 flake on individual test structures, and among the population of test structures. There are noticeable changes observed by SEM, AFM, KPFM, and SMM after DC bias in some cases, while other test structures are not impacted during electronic tests. Connections between surface and electrostatic changes to device performance will be discussed.