Contact-Limited Behaviours in Organic Electrochemical Transistors

Organic electrochemical transistors (OECTs), which operate based on electrochemical doping of active organic channel via ion insertion, have transformed the field of organic electronics with their intrinsically high transconductance that offer a promising platform for bio-sensing applications that require an efficient conversion of ionic to electrical signals. While achieving high-transconductance and stable OECTs are of significant importance and have motivated new molecular designs and device architectures such as vertical OECTs [1], contact resistance effects have been discussed relatively less [2, 3]. Here, we present our recent results on elucidating contact-resistance limited effects in OECTs that can provide a method for accurately predicting the intrinsic figure of merit for OECT channel, as well as phenomenological understanding on the origin of contact resistance, which can provide guidelines for developing strategic designs for high-performance OECT devices.

References
[1] A. Facchetti et al. Nature 613, 496–502 (2023)
[2] B. Lüssem et al. Nat. Commun. 11, 2515 (2020)
[3] A. F. Paterson et al. Nat. Mater. 1–7 (2023)