Resistance-Switching Mechanisms in Halide Perovskite—Differentiating Filament, Inductive and Capacitive Behaviors

Halide perovskites are a promising class of semiconductors for various optoelectronic applications, such as solar cells and memristors. While perovskite-based devices often exhibit resistance changes due to the interplay of electronic and ionic processes, understanding the mechanisms behind these changes remains a challenge. Resistance changes associated with capacitive and inductive features have been observed and characterized in many perovskite devices, linked to ionic accumulation and recombination effects. However, perovskite memristors can also exhibit an additional abrupt resistive switching behavior.

This presentation focuses on unveiling the abrupt resistive switching mechanism in perovskite memristors and differentiating it from the capacitive and inductive resistance changes. We will demonstrate that, in perovskite memristors with silver contacts, the formation of a conductive filament causes this abrupt resistive switching. We will present experimental evidence of this filament formation and discuss how the resulting electrical responses differ from the capacitive and inductive behaviors. Furthermore, we will examine the impact of replacing silver contacts with gold contacts in these perovskite memristors, comparing their resistive switching behaviors and highlighting the key similarities and differences in their underlying mechanisms.

By comparing these diverse resistance-switching behaviors—capacitive, inductive, and filamentary—this work aims to provide deeper insight into the mechanisms governing perovskite-based devices. These findings will help optimize memristors for memory applications while offering a broader understanding of resistive switching in other perovskite systems, including solar cells.