Apr 10, 2025
4:00pm - 4:15pm
Summit, Level 4, Room 444
Yihuang Xiong1,Shay McBride1,Xiang Zhang2,Pulickel Ajayan2,Sinead Griffin3,Geoffroy Hautier1
Dartmouth College1,Rice University2,Lawrence Berkeley National Laboratory3
Yihuang Xiong1,Shay McBride1,Xiang Zhang2,Pulickel Ajayan2,Sinead Griffin3,Geoffroy Hautier1
Dartmouth College1,Rice University2,Lawrence Berkeley National Laboratory3
Point defects in semiconductor are becoming central to quantum technologies and serve as an appealing platform for realizing spin-photon interface, which is fundamental for building quantum networking and communication applications. Currently, the most prominent quantum defect NV center suffers from spectrum diffusion, which negatively impact the indistinguishability of the emitted photons. Therefore, there is an urgent need to search for quantum defects that are robust against local fluctuating electric field. In this talk, we will present a high-throughput search for quantum defects in diamond that exhibit suitable spin state and radiative lifetime for spin-photon interface. More importantly, we focused on candidates that can be realized in diamond, considering its limited dopability, and that can maximally suppress the Stark effect despite the presence of electric field. Our work sheds light on design strategies of novel quantum defects in semiconductors.