Ferroelectric Nitrides for Non-Volatile Memory and Computing

In this talk I will discuss memory devices from 2D materials when integrated with emerging wurtzite structure ferroelectric nitride materials namely aluminium scandium nitride (AlScN). First, I will present on Ferroelectric Field Effect Transistors (FE-FETs) made from 2D materials when integrated with AlScN and make the case for 2D semiconductors in this application. Next I will introduce our work on Ferroelectric Diode (FeD) devices also based on thin AlScN. In addition, I will also present how FeDs provide a unique advantage in compute-in-memory (CIM) architectures for efficient storage, search as well as hardware implementation of neural networks. Finally, I will present ongoing work and opportunities to extend the application of AlScN ferrodiodes into extreme environments, scaling them and integration with SiC electronics. I will end the talk with a broad perspective on the role of novel materials and heterostructures that could turbo-charge pervasive semiconductor technologies for electronic computing.