Band structure modification of the Mn-doped Multicomponent Dilute Semiconductors and Topological Semimetal Layers

The research aims to develop the technology for manufacturing complex III-Mn-V semiconductor compounds and topological semimetals by molecular beam epitaxy to improve their properties for photonic and spintronic applications. Comprehensive characterization techniques will be used to characterize the electronic properties, mechanisms of ferromagnetic ordering, and transport properties.
The ternary alloys III-Mn-V are the most studied materials and are already known to display useful spintronic properties in their metallic and insulating phases. In parallel with the onset of research on dilute magnetic semiconductors, topological insulators, and semimetals have recently created significant scientific interest, where spin-charge coupling plays an important role in conductivity. The proposed research utilizes hard- and soft-X-ray ARPES measurements supported by magnetization measurements using physical properties measurement system (PPMS) and broadband vector network analyzer – ferromagnetic resonance (VNA–FMR) spectroscopy module in particular, and optical measurements with Raman-scattering experiments, spectroscopic ellipsometry.