Identification of Defect-Induced Emission Peaks in Vanadium Doped WSe₂

The availability of optically-active quantum defects is one of the building blocks towards quantum information science applications. Two-dimensional (2D) materials such as transition metal dichalcogenides (TMDs) emerge as a promising platform to host such quantum defects owing to their intrinsic quantum confinement, long expected spin coherence time and strong spin-orbit coupling (SOC). Vanadium doped WSe₂ has been studied for its long-ranged magnetic behaviors and exhibits promising emission signatures for quantum technologies. In this work, we examine the emission peaks in V-doped WSe₂ and its magnetic field response through experimental characterization and use first-principles computations to provide insight for their origins.