April 7 - 11, 2025
Seattle, Washington
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2025 MRS Spring Meeting & Exhibit
EL08.07.02

A Phenomenological Thermodynamic Energy Density Function for Ferroelectric Wurtzite Al1-xScxN Single Crystals

When and Where

Apr 9, 2025
5:00pm - 7:00pm
Summit, Level 2, Flex Hall C

Presenter(s)

Co-Author(s)

Yijia Gu1,Andrew Meng2,Aiden Ross3,Long-Qing Chen3

Missouri University of Science and Technology1,University of Missouri–Columbia2,The Pennsylvania State University3

Abstract

Yijia Gu1,Andrew Meng2,Aiden Ross3,Long-Qing Chen3

Missouri University of Science and Technology1,University of Missouri–Columbia2,The Pennsylvania State University3
In this work, we develop a composition-dependent Landau-Devonshire free energy density function for aluminum scandium nitride (Al1-xScxN) using the layered hexagonal structure as the high-symmetry centrosymmetric reference state. By assuming a linear dependence of the second-order Landau coefficient on Sc concentration, the energy function accounts for compositional effects on the total free energy. The parameters of the thermodynamic energy function are fitted to existing experimental and theoretical data. With composition-dependent stiffness constants and electrostrictive coefficients, the free energy density accurately reproduces key ferroelectric properties such as spontaneous polarization, relative permittivity, and piezoelectric coefficients. A notable divergence in relative permittivity is observed at the critical composition where the ferroelectric transition occurs. We further analyze Al1-xScxN thin films under biaxial substrate strain and find that the strain has minimal impact on the critical composition or the phase boundary between ferroelectric and non-ferroelectric wurtzite phases. These results demonstrate the feasibility of applying this composition-dependent Landau-Devonshire energy function to describe novel wurtzite-type ferroelectric solid solutions. The developed energy function serves as a foundational tool for quantitatively modeling Al1-xScxN and can be extended to more complex models such as phase-field. This advancement enables potential quantitative studies of inhomogeneous ferroelectric switching and finite-size effects, thereby promoting the integration of these promising materials into microelectronic devices.

Keywords

nitride

Symposium Organizers

Morgan Trassin, ETH Zurich
John Heron, University of Michigan
Dennis Meier, Norwegian University of Science and Technology
Michele Conroy, Imperial College London

Session Chairs

Michele Conroy
Morgan Trassin

In this Session