Transistor-Type Tin Halide Perovskite Memory with Heterostructure Induced by Ethylenediammonium

Heterostructure-based flash memory has garnered significant attention due to its potential for rapid operation and lower power consumption.^{1, 2} However, the fabrication of 2D materials-based channels and charge trapping layers in these devices, typically synthesized via mechanical exfoliation or CVD growth, encounters challenges regarding yield and scalability. Halide perovskites offer promising alternatives for the channel and charge trapping layers in heterostructure memory devices, providing advantages such as scalability to large areas and the ease of heterostructure formation through compositional modulation.^{3, 4, 5} In this work, we report a transistor-type memory that employs tin halide perovskite thin films, where heterostructures are formed through the incorporation of ethylenediammonium (EDA). The regions containing EDA function as charge trapping centers, thereby inducing the memory characteristics in the device. The optimized memory device with 1mol% EDA exhibits memory window of 2.892 V and an on/off current ratio (I_on/I_off) over 10⁵ repeatedly in transfer characterization under V_GS sweep range of ±5 V. The device demonstrates stable data storage, with retention time surpassing 2000 seconds and endurance exceeding 250 cycles while maintaining I_on/I_off over 10³. Multi-level data storage capability is also achieved through the application of various programming/erasing voltages.

References
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