Epitaxial Integration of Multilayer Perovskite Oxide Devices on Silicon

Over the past few decades, silicon-based semiconductors have driven significant advancements but are now approaching the physical limits of Moore's Law. To overcome these challenges, integrating new materials with silicon chips is emerging as a promising alternative. In this work, we used an epitaxial SrTiO₃ buffer layer grown by molecular beam epitaxy (MBE) on a silicon substrate and integrated perovskite layers on top of the SrTiO₃ using pulsed laser deposition (PLD). We epitaxially integrated high-mobility La-doped BaSnO₃ (BLSO), LaInO₃/BaSnO₃ two-dimensional electron gas (2DEG), and a double-gate FET with high-k dielectric SrHfO₃ gate oxide and BLSO. As multi-gate devices like Fin-FET and GAA-FET have become essential structures in semiconductor technology, our epitaxial double-gate FET, combining new perovskite semiconductors with silicon, has demonstrated performance improvements when it evolves from a single-gate to a double-gate design. Our work not only demonstrates the possibility of integrating silicon with perovskite FETs but also establishes the foundation for novel functional devices on silicon chips.