Intrinsically Stretchable Active-Matrix Memory Transistor Array Enabled by Metal Nanoparticle Floating Gate for Skin-Like Electronics

Electronic skin, featuring mechanical property mimic to human skin and equipped with a variety of electronic components, has been developed to achieve advanced sensory capabilities. To further facilitate artificial intelligence features, it is crucial to develop stretchable memory device technology with safe and long-term data storage. However, technology for secure personal information under even physical damage of stretchable memory devices remains challenging. Herein, we reported an intrinsically stretchable memory transistor using an intermixture of metal (Ag) nanoparticles and elastomer based floating gate for nonvolatile memory performance. As a result, proper energy-band alignment between the semiconductor and dielectric facilitated sustainable memory performance while adopting dual-stimuli (optical and electrical) writing system to prevent easy erasure of recorded data. The device obtained a high memory on/off ratio (>10⁵), a long retention time (10⁶s) and preserved their performance under multiple stretching cycles of 50% uniaxial or 30% biaxial strain. Furthermore, a 7 by 7 active-matrix memory transistor array was fabricated with developed transistor structures and exhibited stable personalized data storage under any type of deformation.