Wide Bandgap Amorphous Oxide Semiconducting Thin Film Transistor Inverter Fabricated by Pulsed Laser Deposition

Wide bandgap amorphous oxide semiconductor SIZO thin-film transistor (SIZO-TFT) has been fabricated by pulsed laser deposition, facilitating the attainment of the appropriate stoichiometric ratios with ease. The SIZO material was deposited at different temperatures (room temperature and 100 °C) using laser ablation (Nd:YAG) in an oxygen atmosphere. The oxygen pressure is maintained at 50 sccm. The chamber pressure is maintained at about 200 mTorr throughout the deposition process. The deposition was carried out for 30 minutes. The SIZO offers enhanced electrical properties, including high TFT mobility exceeding 10 cm/Vs and cost-effective manufacturability. The SIZO-TFT serves as a TFT pixel switching backplane for various high-performance active-matrix flat-panel displays and is regarded as the optimal TFT technology for future applications across diverse electronic domains, including sensors, the Internet of Things (IoT), energy harvesting, and medical/bio-interface devices. Hence, the advancement of large-scale circuits beyond the discrete TFT device level is increasingly crucial for progressing to the next phase of oxide-TFT technology. Specifically, advancing oxide-TFT-based inverter device technology is crucial for the development of various digital and analogue circuits. This research examines SIZO-TFT-based inverter technology.