Apr 9, 2025
5:00pm - 7:00pm
Summit, Level 2, Flex Hall C
Inkook Hwang1,Jiwon Kim1,Changbun Yoon1,Hyosil Yang1
Tech University of Korea1
With the continued scaling of semiconductor technologies to nanometer dimensions, leakage current has emerged as a critical challenge. As a result, oxide-based semiconductors, which are replacing traditional silicon-based channel layers, have garnered significant research attention. In this study, we engineered metal-insulator-semiconductor-metal (MISM) capacitors incorporating HfO
2 and TiO
2 thin films, which were deposited using remote plasma (RP) and direct plasma (DP) atomic layer deposition (ALD) methods, respectively. The investigation focuses on the distinct charge trapping behaviors of HfO
2 and the semiconductor properties of TiO
2 under varying plasma conditions.
Charge-trapping memory (CTM) devices were fabricated using HfO
2 as the charge trapping layer (CTL) and TiO
2 as the semiconductor channel, with Al
2O
3 employed as the tunneling and blocking layers to mitigate charge leakage. Optimization of the annealing temperature for TiO
2 resulted in an anatase phase, enhancing its semiconductor performance. Notably, RP-deposited HfO
2-TiO
2 CTM devices exhibited superior memory characteristics when compared to their DP-deposited counterparts. These improvements are attributed to the reduced plasma-induced damage and contamination in the RP process, leading to a lower density of oxygen vacancies at the interface. This was further confirmed by XPS, AFM, XRD, and electrical performance evaluations, underscoring the potential of RP ALD for high-performance, cutting-edge memory applications.
This work was supported by K-CHIPS(Korea Collaborative & High-tech Initiative for Prospective Semiconductor Research) (2410000308, RS-2023-00237030, 23027-15FC) funded by the Ministry of Trade, Industry & Energy(MOTIE, Korea).