April 7 - 11, 2025
Seattle, Washington
Symposium Supporters
2025 MRS Spring Meeting & Exhibit
SU04.06.04

Protons in Room-Temperature, Post-Synthesis Doping and Defect Engineering of Oxides for Energy Applications

When and Where

Apr 11, 2025
2:15pm - 2:30pm
Summit, Level 4, Room 448

Presenter(s)

Co-Author(s)

Ian Suni1,Heonjae Jeong2,Raylin Chen1,Grace McKnight1,Elif Ertekin1,Xiao Su1,Edmund Seebauer1

University of Illinois at Urbana-Champaign1,Gachon University2

Abstract

Ian Suni1,Heonjae Jeong2,Raylin Chen1,Grace McKnight1,Elif Ertekin1,Xiao Su1,Edmund Seebauer1

University of Illinois at Urbana-Champaign1,Gachon University2
Injection of interstitial atoms by specially prepared oxide surfaces under electrochemical bias from aqueous solutions offers a new and attractive approach for post-synthesis cation doping and defect control for energy applications such as photocatalysis and electrocatalysis. In oxides such as TiO2, the highly mobile injected interstitials can include those of oxygen (Oi), cations such as Mn (Mni) and others that facilitate material fabrication in a regime near room temperature wherein kinetic rather than thermodynamic effects dominate defect behavior.1 Hydrogen atoms within such oxides, present either adventitiously or intentionally, often act as donors and therefore effectively as protons. These protons participate in solid-state acid-base reactions with chemically basic acceptors such as Oi. Here we employ solid-state isotopic diffusion experiments combined with first principles calculations by density functional theory (DFT) to illustrate how such chemistry may be exploited and controlled to improve material properties. For example, diffusion experiments together with depth-profiling by x-ray photoelectron spectroscopy show that Oi reacts with Mni to form interstitial clusters that impede the penetration of Mn and subsequent lattice substitutional. However, isotopic self-diffusion measurements using 18O, combined with progressive annealing protocols2 and DFT, suggest that Oi also acts as a polyfunctional base that reacts with protons to form small interstitial clusters having dissociation energies ranging from 1.3 to 1.9 eV. These clusters comprise a family incorporating various numbers, compositions and configurations of O and H atoms. Corresponding experiments with ZnO suggest that families of such clusters are probably common in semiconducting oxides. Thus, a general strategy may be envisioned wherein H is introduced intentionally into oxides to react with injected Oi and thereby suppress undesired clustering with injected dopant interstitials.
1. Heonjae Jeong, Elif Ertekin and Edmund G. Seebauer, “Surface-Based Post-synthesis Manipulation of Point Defects in Metal Oxides Using Liquid Water,” ACS Appl. Mater. Interfaces, 14 (2022) 34059-34068.
2. Heonjae Jeong and Edmund G. Seebauer, “Influence of interstitial cluster families on post-synthesis defect manipulation and purification of oxides using submerged surfaces,” J. Chem. Phys., 161 (2024) 121103.

Keywords

defects | H | surface reaction

Symposium Organizers

Artur Braun, EMPA-Swiss Federal Laboratories for Materials Science and Technology
Qianli Chen, Shanghai Jiao Tong University
Elena Rozhkova, Argonne National Laboratory
WonHyoung Ryu, Yonsei University

Session Chairs

Artur Braun
Huyen Dinh

In this Session