High-Performance Vapour-Deposited Metal-Halide Perovskite p-Channel Transistors

The evolution towards complementary electronics have accentuated the need for simultaneous progress in both n-type and p-type semiconductors.^1-3 The pioneering success of n-type indium-gallium-zinc-oxide transistors has catalysed the pursuit of p-type counterparts for decades. Despite the alarming breakthroughs of tin halide perovskites for high-performance p-channel transistors, their synthesis is significantly focused on solution-process.^4,5 Here, we report high-performance p-channel perovskite transistors through thermal evaporation of caesium-tin-iodide based semiconductors with a key molecule, lead halide. Lead halides guides the complete control over the solid-state reactions of perovskite precursors through catalysing crystallization and modulating hole concentration. The optimized transistors exhibit average field-effect hole mobilities over 40 cm² V^-1 s^-1 and on/off current ratios exceeding 10⁸, with high structural stability. Thermal evaporation of high-performance p-channel metal halide perovskite transistors demonstrate uniformity over large wafer-scale electronics, offering significance in their industrial compatibility.

1. H. Zhu et al. Nat. Electron. 6, 650-657 (2023)
2. A. Liu et al. Nat. Electron. 5, 78-83 (2022)
3. A. Liu et al. Nat. Electron. 6, 559-571 (2023).
4. D. Lin et al. Mater. Today Adv. 16, 100277 (2022)
5. Y. Vaynzof. Adv. Energy Mater. 10, 48. 2003073 (2020)