April 7 - 11, 2025
Seattle, Washington
Symposium Supporters
2025 MRS Spring Meeting & Exhibit
QT04.08.03

Tailoring Electrical and Magnetic Properties in Oxide Thin Films via Ionic Defect Control

When and Where

Apr 9, 2025
4:15pm - 4:30pm
Summit, Level 4, Room 440

Presenter(s)

Co-Author(s)

Hyeon Han1

Pohang University of Science and Technology1

Abstract

Hyeon Han1

Pohang University of Science and Technology1
Defects in oxides, such as oxygen vacancies and ion interstitials, play a crucial role in inducing new phases and giving rise to intriguing electrical and magnetic properties. In this presentation, I will demonstrate the suppression of octahedral tilting and altered magnetism in ferromagnetic SrRuO3 thin films via hydrogen spillover [1]. The film further shows the reversal of anomalous Hall effects, enabling a topological Hell effect-like hump signal through hydrogenation. In addition, I will present the first realization of the epitaxial growth of T-Nb2O5 thin films, which feature vertical 2D ionic transport channels [2]. These vertical 2D channels enable rapid Li-ion migration into the film in addition to a colossal insulator-metal transition, where resistivity decreases by 11 orders of magnitude due to the electron population of the initially empty Nb 4d0 states. This study paves the way for controlling emergent physical phenomena in correlated oxide thin films and advancing the development of iontronic materials and devices.

[1] H. Han* et al., Adv. Mater. 35, 2207246 (2023)
[2] H. Han* et al., Nat. Mater. 22, 1128-1135 (2023)

Keywords

epitaxy

Symposium Organizers

Ho Nyung Lee, Oak Ridge National Laboratory
Hua Zhou, Argonne National Laboratory
Ruijuan Xu, North Carolina State University
Elizabeth Skoropata, Paul Scherrer Institut

Symposium Support

Bronze
Nextron
QUANTUM DESIGN

Session Chairs

Milan Radovic
Changhee Sohn

In this Session