Electron Beam-Induced Alterations in Deformation Behavior of Oxide Materials for Semiconductor Devices

This study investigates the effects of electron beam (e-beam) irradiation on the deformation behavior of key oxide materials, including silica, alumina, and zirconia, which are essential components in semiconductor devices. Through in situ scanning electron microscopy (SEM) and micro-mechanical testing, we examine how e-beam exposure changes the mechanical deformation and fracture characteristics of these oxides.
Our findings show that e-beam irradiation can significantly modify deformation mechanisms in oxide materials, primarily by altering dislocation movement and twin formation. Depending on the specific material and irradiation conditions, these changes can lead to either enhanced ductility or embrittlement. These results offer new insights into the interactions between e-beam irradiation and oxide materials, shedding light on how ionizing radiation impacts the structural integrity of materials used in semiconductor devices under extreme environments.