All Inorganic-Based Perovskite Thin Film Using Evaporation and Atomic Layer Deposition

We deposited CsPbI₃ films using a co-evaporation method, and optimized the film thickness and heat treatment. UV-vis and PL analysis confirmed the presence of a peak at 710nm wavelength, indicating the absorption and emission properties of the a-phase perovskite film after ~300 °C annealing. XRD analysis further confirmed the presence of (001) crystal plane in the film. The changes in phase transition temperature and physical properties of perovskite were studied through Br doping in CsPbI₃ films. In this study, we manufactured a perovskite solar cell (PSC) by combining the co-deposited CsPb(I/Br)₃ perovskite with an inorganic charge transport layer using atomic layer deposition (ALD). ALD NiOx and SnO₂ films used as a hole transport layer (HTL) and an electron transport layer (ETL). PSC using ALD SnO₂ as ETL showed a maximum efficiency of ~16% because the electron transfer distance from the perovskite was relatively uniform. The inorganic perovskite thin films and charge transfer layer thin films fabricated by vacuum deposition will be discussed for spectroscopic analyses such as time-resolved photoluminescence (TRPL), pulsed voltage-space charge limited current (PV-SCLC), photoluminescence quantum efficiency (PLQE) and PITR.