April 7 - 11, 2025
Seattle, Washington
Symposium Supporters
2025 MRS Spring Meeting & Exhibit
EN05.04.01

Additive-Assisted Hydrothermal Growth Enabling Defect Passivation and Void Remedy in Antimony Selenosulfide Solar Cells

When and Where

Apr 9, 2025
8:00am - 8:30am
Summit, Level 3, Room 330

Presenter(s)

Co-Author(s)

Byungha Shin1,Yazi Wang1,Seunghwan Ji1

Korea Advanced Institute of Science and Technology1

Abstract

Byungha Shin1,Yazi Wang1,Seunghwan Ji1

Korea Advanced Institute of Science and Technology1
Antimony selenosulfide, Sb2(S,Se)3, has recently emerged as a promising light-absorbing material due to its tunable photovoltaic properties, low toxicity, and robust environmental stability. However, despite these advantages, the current record efficiency for Sb2(S,Se)3 solar cells significantly lags behind their Shockley-Queisser limit, especially when compared to other well-established chalcogenide-based thin-film solar cells, such as CdTe and Cu(In,Ga)Se2. This underperformance primarily arises from the formation of unfavorable defects, predominately located at deep energy levels, which act as recombination centers, thereby limiting the potential for performance enhancement in Sb2(S,Se)3 solar cells. Specifically, deep-level defects, such as sulfur vacancy (VS), have a lower formation energy, leading to severe non-radiative recombination and compromising device performance. In recent years, my research group has continually improved power conversion efficiency of antimony selenosulfide via fine control of additional Se flux during the absorber preparation, rear surface passivation by post-deposition Se treatment, and tailoring bandgap grading by a hybrid growth approach. Most recently, we introduced thioacetamide (TA), a sulfur-containing additive, into the precursor solution for the hydrothermal deposition of Sb2(S,Se)3. Our results indicate that the incorporation of TA helps in passivating deep-level defects such as sulfur vacancies and in suppressing the formation of large voids within the Sb2(S,Se)3 absorber. Consequently, Sb2(S,Se)3 solar cells, with reduced carrier recombination and improved film quality, achieved a power conversion efficiency of 9.04%, with notable improvements in open-circuit voltage and fill factor. This work provides deeper insights into the passivation of deep-level donor-like VS defects through the incorporation of a sulfur-containing additive, highlighting pathways to enhance the photovoltaic performance of Sb2(S,Se)3 solar cells.

Symposium Organizers

Heayoung Yoon, University of Utah
Edgardo Saucedo, Universitat Politècnica de Catalunya
Hao Xin, Nanjing University of Posts and Telecommunications
Eric Colegrove, National Renewable Energy Laboratory

Session Chairs

Rasmus Nielsen
Nicolae Spalatu

In this Session