Epitaxial Growth of Bi₂O₂X Films and Related Heterostructures

The pursuit of high-performance electronic devices has driven the research focus towards 2D semiconductors with high electron mobility and suitable bandgap. Previous studies have demonstrated that bismuth oxycompound (Bi₂O₂X, X= S, Se, Te, BOX) has remarkable physical properties, such as native oxide layer and ultrahigh carrier mobility, facilitating the development of advanced electronic devices in the sub-silicon era. However, the understanding of the growth of BOX is still unclear, and the methods to control BOX’s physical properties should be further explored. Thus, in our lab, the epitaxy of Bi₂O₂Se (BOSe) and Bi₂O₂S (BOS) can be obtained to realize the growth mechanism and secure higher crystallinity. The intrinsic transportation property and photoelectricity of BOX will also be investigated. Furthermore, various control methods have been demonstrated on BOX, including compositional modification, doping process, and non-volatile modulation. With these efforts, the controlled methods provide pathways to manipulate the electrical properties of BOX and corresponding devices, further advancing this material system for development in the next-generational electronics.