Intrinsically Stretchable Polymer Semiconductors for Skin Electronics

The development of intrinsically stretchable polymer semiconductors represents a significant advancement in the field of wearable skin electronics. These materials are designed to seamlessly conform to the dynamic movements of the human body, offering high performance and durability under mechanical strain. In this work, we present a comprehensive investigation into the fabrication and performance of intrinsically stretchable polymer semiconductors, utilizing advanced elastomeric materials for enhanced flexibility, conductivity, and stability. Our study focuses on integrating nanoconfined semiconductor networks within elastomeric matrices, leading to semiconducting materials that retain their electrical properties even under 100% strain. Notably, the stretchable transistors and phototransistors we developed demonstrate excellent mechanical durability, strain-insensitive electrical behavior, and high photoresponsivity across the visible to near-infrared spectrum, making them ideal for skin-like applications, such as bio-integrated sensors, temperature monitors, and optoelectronic systems. We also explore novel designs for stretchable memory devices capable of storing data under deformation and autonomous self-healing polymer transistors that recover from physical damage. The potential of these materials in the future of artificial skin and wearable technologies is profound, offering new possibilities for user-interactive electronic-skin applications.