April 7 - 11, 2025
Seattle, Washington
Symposium Supporters
2025 MRS Spring Meeting & Exhibit
EL03.13.04

Nanoscale Editing of Multi and Single Layer WS2 via Gas-Assisted Focused Electron Beam Induced Etching for Device Prototyping

When and Where

Apr 11, 2025
9:15am - 9:30am
Summit, Level 4, Room 425

Presenter(s)

Co-Author(s)

Brendan Gellerup1,2,John Lasseter2,Sujoy Ghosh2,Kai Xiao2,Scott Retterer2,Steven Randolph2,Philip Rack1

University of Tennessee, Knoxville1,Oak Ridge National Laboratory2

Abstract

Brendan Gellerup1,2,John Lasseter2,Sujoy Ghosh2,Kai Xiao2,Scott Retterer2,Steven Randolph2,Philip Rack1

University of Tennessee, Knoxville1,Oak Ridge National Laboratory2
Focused electron beam induced etching (FEBIE) of multi- and single-layer WS2 with the XeF2 precursor was explored to demonstrate the efficacy of editing nanoscale devices with minimal damage and high resolution. Transition metal dichalcogenide (TMD) exfoliated flakes were selectively etched and etch rates and efficiencies were determined for WS2, MoS2, and WSe2. Etched samples were characterized by atomic force microscopy (AFM) and Raman and photoluminescence spectroscopy. Scanning transmission electron microscopy was performed to determine etch resolution and the extent of peripheral etching damage. Field effect transistors were fabricated by editing single-layer WS2 to form channels, then device characteristics were measured. We report the effects of beam energy, beam current, dwell time, pixel pitch, and XeF2 working chamber pressure for the FEBIE of WS2, and present the efficacy of making on-the-fly 2D devices.

Keywords

2D materials | atomic layer etching | Raman spectroscopy

Symposium Organizers

Eli Sutter, University of Nebraska--Lincoln
Luca Camilli, University of Rome Tor Vergata
Mads Brandbyge, Technical University of Denmark
José Manuel Caridad Hernández, Universidad de Salamanca

Session Chairs

Luca Camilli
Camilla Coletti

In this Session