Apr 11, 2025
9:15am - 9:30am
Summit, Level 4, Room 425
Brendan Gellerup1,2,John Lasseter2,Sujoy Ghosh2,Kai Xiao2,Scott Retterer2,Steven Randolph2,Philip Rack1
University of Tennessee, Knoxville1,Oak Ridge National Laboratory2
Brendan Gellerup1,2,John Lasseter2,Sujoy Ghosh2,Kai Xiao2,Scott Retterer2,Steven Randolph2,Philip Rack1
University of Tennessee, Knoxville1,Oak Ridge National Laboratory2
Focused electron beam induced etching (FEBIE) of multi- and single-layer WS
2 with the XeF
2 precursor was explored to demonstrate the efficacy of editing nanoscale devices with minimal damage and high resolution. Transition metal dichalcogenide (TMD) exfoliated flakes were selectively etched and etch rates and efficiencies were determined for WS
2, MoS
2, and WSe
2. Etched samples were characterized by atomic force microscopy (AFM) and Raman and photoluminescence spectroscopy. Scanning transmission electron microscopy was performed to determine etch resolution and the extent of peripheral etching damage. Field effect transistors were fabricated by editing single-layer WS
2 to form channels, then device characteristics were measured. We report the effects of beam energy, beam current, dwell time, pixel pitch, and XeF
2 working chamber pressure for the FEBIE of WS
2, and present the efficacy of making on-the-fly 2D devices.