Organic-Inorganic Hybrid Memristor for Neuromorphic Electronics.

In the era of big data, there is a growing demand for highly efficient technologies to facilitate the acquisition, storage, and analysis of vast volumes of information. The Resistive Switching Random Access Memory (ReRAM), having non-volatile memory attributes, synaptic-like behavior, and energy-efficient, high-density features, had emerged as a promising tool poised to transform and shape the development of neuromorphic computing and wearable electronics. In this work, an organic-inorganic hybrid poly (vinyl alcohol)/titanium oxide hydrate hybrid memristor device is developed. The device of the structure Au/PVA:TiOH/Au exhibits bipolar non-volatile resistive switching characteristics. We hypothesize that the operational mechanism of the PVA:TiOH layer is driven by the formation and rupture of local conductive Ti³⁺ filaments caused by Joule heating and electric field-assisted reduction of Ti⁴⁺, producing dioxygen, that induces a Schottky-like barrier behavior at one interface and a quasi-ohmic contact behavior at the other. This biocompatible memristor presents a compelling case for sustainable memory solutions in the increasing field of neuromorphic electronics.