Room-Temperature Direct Growth of Transition Metal Dichalcogenide Films via Remote Plasma-Assisted Chemical Vapor Deposition

Transition metal dichalcogenides (TMDs) have gained significant attention in recent years for their unique electronic and optical properties, making them promising candidates for various applications in electronic and optoelectronic devices. This study presents a novel approach for the room-temperature growth of TMDs materials utilizing a plasma-assisted chemical vapor deposition (plasma-assisted CVD) method. The conventional methods for TMDs synthesis often require high temperatures, limiting their compatibility with certain substrates and device integration processes. The proposed plasma-assisted CVD method aims to overcome these challenges by enabling the growth of high-quality TMDs films at room temperature.<br/>The plasma-assisted approach leverages the advantages of reactive species generated in the plasma, promoting enhanced precursor reactivity and efficient material deposition at lower temperatures. The study investigates the influence of key process parameters, such as precursor gas composition, plasma power, and substrate conditions, on the growth kinetics, crystal quality, and morphology of the TMDs films. Characterization techniques, including scanning electron microscopy (SEM), transmission electron microscopy (TEM) and Raman spectroscopy, are employed to analyze the structural and morphological properties of the synthesized TMDs materials.<br/>The findings highlight the feasibility and efficacy of the room-temperature growth of TMDs using the proposed plasma-assisted CVD method, paving the way for the development of flexible and scalable fabrication processes for TMDs-based devices. The ability to grow TMDs films at lower temperatures expands their compatibility with a broader range of substrates, offering new opportunities for integration into advanced electronic and optoelectronic applications. This research contributes to the ongoing efforts to advance the synthesis techniques of TMDs materials and unlock their full potential for next-generation electronic technologies.