April 22 - 26, 2024
Seattle, Washington
May 7 - 9, 2024 (Virtual)

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2024 MRS Spring Meeting
EN07.01.01

Solid-State Electrochemical Thermal Transistors with Large Thermal Conductivity Switching Width

When and Where

Apr 22, 2024
10:45am - 11:00am
Room 344, Level 3, Summit

Presenter(s)

Co-Author(s)

Ahrong Jeong1,Zhiping Bian1,Mitsuki Yoshimura1,Bin Feng2,Yuichi Ikuhara2,Yusaku Magari1,Hiromichi Ohta1

Hokkaido University1,The University of Tokyo2

Abstract

Ahrong Jeong1,Zhiping Bian1,Mitsuki Yoshimura1,Bin Feng2,Yuichi Ikuhara2,Yusaku Magari1,Hiromichi Ohta1

Hokkaido University1,The University of Tokyo2
Thermal transistors that electrically switch heat flow on and off have attracted growing attention as thermotronic devices such as thermal shutters and thermal displays. In 2023, we demonstrated the world’s first solid-state electrochemical thermal transistors with SrCoO<i><sub>x</sub></i> (2 ≤ <i>x</i> ≤ 3) as the active layer.<sup>[1-3]</sup> The thermal conductivity (<i>κ</i>) on/off ratio was approximately 4 and <i>κ</i> switching width was 2.85 W m<sup>−1</sup> K<sup>−1</sup>. Here, we demonstrate solid-state thermal transistors with a large <i>κ</i> switching width of 9.5 W m<sup>−1</sup> K<sup>−1</sup>. We used CeO<sub>2</sub> thin films as the active layer directly deposited on the solid electrolyte YSZ substrate using the PLD method. A Pt thin film was deposited on the surface of the CeO<sub>2</sub> thin film and the back surface of the YSZ substrate using the sputtering method to create an all-solid-state thermal transistor. When the CeO<sub>2</sub> thin film was once reduced and then oxidized, the <i>κ</i> was approximately 2.5 W m<sup>−1</sup> K<sup>−1</sup> in the most reduced state, and <i>κ</i> increased with oxidation to 11.8 W m<sup>−1</sup> K<sup>−1</sup>. This reduction/oxidation was repeated 5 times and the average value of <i>κ</i> was 2.5 W m<sup>−1</sup> K<sup>−1</sup> after reduction and 12 W m<sup>−1</sup> K<sup>−1</sup> after oxidation. The CeO<sub>2</sub>-based solid-state electrochemical thermal transistors might have the potential for thermotronic devices such as thermal shutters and thermal displays.<br/><br/>[1] Q. Yang <i>et al</i>., <i>Adv. Funct. Mater.</i> <b>33</b>, 2214939 (2023).<br/>[2] Z. Bian <i>et al</i>., <i>ACS Appl. Mater. Interfaces</i> <b>15</b>, 23512 (2023).<br/>[3] M. Yoshimura <i>et al</i>., <i>ACS Appl. Electron. Mater.</i> <b>5</b>, 4233 (2023).

Keywords

thermal conductivity | thin film

Symposium Organizers

Woochul Kim, Yonsei University
Sheng Shen, Carnegie Mellon University
Sunmi Shin, National University of Singapore
Sebastian Volz, The University of Tokyo

Session Chairs

Woochul Kim
Sunmi Shin

In this Session