April 22 - 26, 2024
Seattle, Washington
May 7 - 9, 2024 (Virtual)
Symposium Supporters
2024 MRS Spring Meeting & Exhibit
EL04.15.01

Boron Nitride Nanotube, Its Chemistry and Application in Sensors and Transistors

When and Where

Apr 26, 2024
3:00pm - 3:15pm
Room 345, Level 3, Summit

Presenter(s)

Co-Author(s)

Jingwen Guan1,Shiva Ashoori2,Huimin Ding1,Ping Lu1,Eyal Roseshter3,Liliana Gaburici1,Ravi Prakash2,Stephen Mihailov1,Christopher Kingston1

Security & Disruptive Technologies Research Centre, National Research Council Canada1,Department of Electronics Engineering, Carleton University2,Department of Physics, Carleton University3

Abstract

Jingwen Guan1,Shiva Ashoori2,Huimin Ding1,Ping Lu1,Eyal Roseshter3,Liliana Gaburici1,Ravi Prakash2,Stephen Mihailov1,Christopher Kingston1

Security & Disruptive Technologies Research Centre, National Research Council Canada1,Department of Electronics Engineering, Carleton University2,Department of Physics, Carleton University3
Boron nitride nanotube (BNNT) is another emerging mankind one dimensional nanomaterial discovered at the same time frame around the years of 1990 as its counterpart carbon nanotube (CNT), but it has been much delayed in its synthesis for a large scale, its chemistry and application due to its differences in production and material characteristics from CNT. BNNT possesses a compelling set of intrinsic properties similar to CNT, such as one-dimensional tubular structures, light weight, high mechanical strength, and high thermal conductivity. But unlike CNT, BNNT is an electrical insulator with a wide bandgap about 5.5 eV, and has a hetero-atomic network of B and N in turn instead of homo-atomic of C network structure, therefore, BNNT has additional characteristics such as transparency in visible light, high thermal stability and high oxidation resistance over 900 <sup>o</sup>C in air. These properties make them high potential in many applications such as high-temperature and extreme environments, transparent armor materials, and radiation shielding protections. Especially, the polarity of B-N bonds in the BNNT network offers unique surface chemistry that can be taken in full advantages for sensing applications, for instance, due to interfacial compatibility and reactivity to its environment. We will present the use of HABS-BNNT materials produced at the National Research Council Canada (NRC) through thermal induction plasma process and the development of the surface chemistry by in-situ B-N bond cleavage with liquid bromine treatment in aqueous solution, leading to OH and amino (NH<sub>2</sub>) dual surface functionalities at the same steps. Such functionalized BNNTs are highly soluble in aqueous and polar organic solvents by themselves without adding any surface agent. Our report will include up to today’s results that such functionalized BNNTs as a sensing material for the active coating layers on optical fiber devices as well as a dielectric material for the applications in capacitors and in organic thin film transistors (OTFTs) for improving their performance and shelf life. An indicative outlook will be briefly discussed in the further development of BNNT-integrated transistors.

Keywords

nanostructure

Symposium Organizers

Hideki Hirayama, RIKEN
Robert Kaplar, Sandia National Laboratories
Sriram Krishnamoorthy, University of California, Santa Barbara
Matteo Meneghini, University of Padova

Symposium Support

Silver
Taiyo Nippon Sanso

Session Chairs

Robert Kaplar
Sriram Krishnamoorthy

In this Session