Multilayered Thin Film Ferroelectric Wurtzites

We report on observations of ferroelectric switching in multilayered sputtered thin films based on wurtzite Zn_1-xMg_xO and Al_1-xB_xN. Ferroelectric switching is achieved in thin film stacks containing ferroelectric and polar non-ferroelectric layers. Total polarizations indicate switching is achieved across the entire film stacks, suggesting propagation of ferroelectric domains across interfaces between layers. We investigate switching pathways and wake-up behavior in these films as characterized through an array of structural and property measurement techniques. We also discuss synthesis controls in Zn_1-xMg_xO sputtered thin films, with an emphasis on connections between structure and electrical properties. We focus on the effect of oxygen chemical potential and temperature on film microstructure and resistivity.