Scanning NV Microscopy

We introduce Scanning NV Microscopy (SNVM) as a non-contact characterization technique to investigate magnetic materials and thin films. We show that SNVM can be used to evaluate MRAM performance at the individual bit level. Magnetic random-access memory (MRAM) is a leading emergent memory technology that is poised to replace current non-volatile memory technologies such as eFlash. However, controlling and improving distributions of device properties becomes a key enabler of new applications at this stage of technology development. Here, We demonstrate magnetic reversal characterization in individual, < 60 nm sized bits, to extract key magnetic properties, thermal stability, and switching statistics, and thereby gauge bit-to-bit uniformity. We showcase the performance of our method by benchmarking two distinct bit etching processes immediately after pattern formation.
Finally, we will provide other examples of the applications of SNVM for the study of multiferroics, 2D materials, and magnonics.