Memristive Devices with Ferrolectric Materials

The field of neuromorphic computing has recently broaden with the emergence of memristive devices as key elements that allow both processing and storage of information in the same unit. One of the materials classes that attract interest is ferroelectrics, as they offer non-volatile memory but also have been demonstrated to behave as memristive devices, allowing muliple resistance values and opening the possibility of their use as artificial synapses in hardware artificial neural networks, as well as in analogue information processing. I will present our work in this direction with different ferroelectric materials (HfO2, BiFeO3 an BaTiO3) and their differnet synaptic characteristics.