Controlled Growth and Integration of 2D Semiconductors for High-Performance Electronics

2D semiconductors have received much interest as next-generation channel materials. The ultrathin nature of 2D semiconductors affords notable advantages, including enhanced electrostatic gate control and continued transistor scaling, which are pivotal for advancing electronic devices. In this talk, I am going to present our recent progress related with growth, characterization, and integration of 2D semiconductors. We have successfully grown up to 8-inch wafer-scale MoS2 films on amorphous substrates through Metal-Organic Chemical Vapor Deposition (MOCVD). Furthermore, we have achieved the growth of single-crystalline MoS2 on selected areas. To assess film quality, we have employed non-destructive characterization methods. Through optimized integration processes, we have demonstrated the effective fabrication of field-effect transistors (FETs) on 8-inch wafers, resulting in exceptional uniformity in electrical performance, with a success rate exceeding 90%. Statistical analyses of high-performance 2D FETs, with variations in channel length, will be presented to provide insights into their performance characteristics. Additionally, this talk explores the persisting challenges associated with materials growth and device fabrication in this field, paving the way for future advancements in 2D-semiconductor-based electronics.