April 22 - 26, 2024
Seattle, Washington
May 7 - 9, 2024 (Virtual)
Symposium Supporters
2024 MRS Spring Meeting & Exhibit
CH04.06.01

Electronic Characterization of 9A-GNR on H:Si(100) using a Scanning Tunneling Microscope

When and Where

Apr 24, 2024
3:30pm - 3:45pm
Room 443, Level 4, Summit

Presenter(s)

Co-Author(s)

Abigail Berg1,Mamun Sarker2,Anshual Saxena3,Narayana Aluru3,Alexander Sinitskii2,Joseph Lyding1

University of Illinois at Urbana-Champaign1,University of Nebraska–Lincoln2,The University of Texas at Austin3

Abstract

Abigail Berg1,Mamun Sarker2,Anshual Saxena3,Narayana Aluru3,Alexander Sinitskii2,Joseph Lyding1

University of Illinois at Urbana-Champaign1,University of Nebraska–Lincoln2,The University of Texas at Austin3
We present the electronic characterization of a new solution-synthesized type graphene nanoribbon (GNR). The GNR was synthesized with two different precursors to form coves along the length of an N=9 armchair GNR. The GNR also contains two different functional end groups, -NO2 and -NH2, with each synthesized to attach to the two different precursors. Atomically precise graphene nanoribbons with functional end groups have the potential for further modification and integration into complex electronic structures. We use the dry-contact transfer (DCT) method to exfoliate the GNRs onto hydrogen passivated Si(100) in a room temperature ultra-high vacuum (UHV) scanning tunneling microscope (STM). The bandgap and density of states are probed using scanning tunneling spectroscopy (STS) and current imaging tunneling spectroscopy (CITS). We find that GNRs tend to cluster in groups and form weak bonds at the functionalized ends. We also find evidence of missing phenyl groups during synthesis which form extra-large coves in the final structure of the GNR. Simulation data indicates that the DFT bandgap is 1.4 eV and an increased density of states over the NO2 end group. Experimentally we see that one end of the GNR appears to be metallic using STS, which we attribute to the NO2 end group. The bandgap appears to have a lateral dependence from 1.7 eV to 2.3 eV along the GNR which will be explored in more detail. Finally, we present the effects of using nanolithography to depassivate the H:Si(100) below the GNR.

Keywords

C | electrical properties | scanning tunneling microscopy (STM)

Symposium Organizers

Yuzi Liu, Argonne National Laboratory
Michelle Mejía, Dow Chemical Co
Yang Yang, Brookhaven National Laboratory
Xingchen Ye, Indiana University

Session Chairs

Luxi Li
Yang Yang

In this Session