Apr 24, 2024
10:30am - 10:45am
Room 342, Level 3, Summit
Yilin Li1,Mario Brützam2,Harikrishnan K. P.1,Sankalpa Hazra3,Zhiren He4,Ramamoorthy Ramesh5,Natarajan Ravi6,Robert Cava7,Craig Fennie1,Venkatraman Gopalan8,David Muller1,Christo Guguschev2,Darrell Schlom1
Cornell University1,Leibniz-Institut fur Kristallzuchtung2,Pennsylvania State University3,University of North Texas4,Rice University5,Spelman College6,Princeton University7,The Pennsylvania State University8
Yilin Li1,Mario Brützam2,Harikrishnan K. P.1,Sankalpa Hazra3,Zhiren He4,Ramamoorthy Ramesh5,Natarajan Ravi6,Robert Cava7,Craig Fennie1,Venkatraman Gopalan8,David Muller1,Christo Guguschev2,Darrell Schlom1
Cornell University1,Leibniz-Institut fur Kristallzuchtung2,Pennsylvania State University3,University of North Texas4,Rice University5,Spelman College6,Princeton University7,The Pennsylvania State University8
Multiferroics with coupled magnetic and electric orders, although rare, hold potential for low-energy-consumption materials for logic and memory capable of electric-field control of magnetism. Barium hexaferrite (BaFe
12O
19), the most common refrigerator magnet, is predicted to gain electric polarization order at room temperature in addition to its robust ferrimagnetism under in-plane, biaxial, compressive strain [1]. The recent realization of single-crystal substrates of Sr
1.03Ga
10.81Mg
0.58Zr
0.58O
19 (SGMZ) [2], an insulator that is isostructural to BaFe
12O
19, enables straining BaFe
12O
19 as SGMZ has a ~1.1% smaller in-plane lattice constant. In addition to strain, to induce the ferroelectric state, an epitaxial bottom electrode is needed to control the electric state for this hexaferrite multiferroic candidate. SrCo
2Ru
4O
11 is a metallic ferromagnetic oxide [3], belongs to the same hexaferrite family as BaFe
12O
19, and has small (~0.3%) in-plane lattice mismatch to the SGMZ substrate. Consequently, a coherent SrCo
2Ru
4O
11 epitaxial thin film on the SGMZ substrate would be ideal for straining BaFe
12O
19 and serving as the bottom electrode of a metal-insulator-metal structure to test for ferroelectricity in this predicted strain-induced multiferroic.
Here we show that a 1.1% in-plane biaxial compressive strain from SGMZ substrates can be imposed on up to 27.5 nm thick BaFe
12O
19 films. The full width at half maximum (FWHM) of the X-ray diffraction rocking curve of the 00
20 peak in w ranges from 0.006° to 0.009°, the smallest ever reported. Scanning transmission electron microscopy (STEM) multislice ptychography results on a commensurately strained film clearly show local electric polarization arising from the off-center displacement of Fe
3+ ions in the trigonal bipyramid sites, locally breaking the mirror-plane symmetry perpendicular to the c-axis of BaFe
12O
19. Second harmonic generation (SHG) proves the symmetry breaking on a larger scale from 6/
mmm (bulk paraelectric BaFe
12O
19) to 6
mm (fully strained BaFe
12O
19). Commensurately strained BaFe
12O
19 containing 95% enriched Fe
57 has been synthesized. Mössbauer measurement will be made on this sample to quantify the splitting between the two sites of the iron cations in the trigonal bipyramid sites.
Films of SrCo
2Ru
4O
11 were grown by MBE on (0001) SGMZ substrates in an adsorption-controlled regime. With matching substrates and adsorption-controlled growth, we have grown epitaxial, fully strained SrCo
2Ru
4O
11 thin films with even lower resistivity than SrCo
2Ru
4O
11 single crystals [3]. Our next step is to grow a commensurately strained metal-insulator-metal BaFe
12O
19/SrCo
2Ru
4O
11/SGMZ stack to test for ferroelectricity.
[1] Wang, P. S., Xiang, H.J.
Physical Review X 4, 011035 (2014).
[2] Guguschev, C. et al.
Crystal Growth & Design 22 (4), 2557-2568 (2022).
[3] Shlyk, L. et al.
Adv. Mater. 20, 1315–1320 (2008).