Apr 24, 2024
10:30am - 10:45am
Room 342, Level 3, Summit
Yilin Li1,Mario Brützam2,Harikrishnan K. P.1,Sankalpa Hazra3,Zhiren He4,Ramamoorthy Ramesh5,Natarajan Ravi6,Robert Cava7,Craig Fennie1,Venkatraman Gopalan8,David Muller1,Christo Guguschev2,Darrell Schlom1
Cornell University1,Leibniz-Institut fur Kristallzuchtung2,Pennsylvania State University3,University of North Texas4,Rice University5,Spelman College6,Princeton University7,The Pennsylvania State University8
Yilin Li1,Mario Brützam2,Harikrishnan K. P.1,Sankalpa Hazra3,Zhiren He4,Ramamoorthy Ramesh5,Natarajan Ravi6,Robert Cava7,Craig Fennie1,Venkatraman Gopalan8,David Muller1,Christo Guguschev2,Darrell Schlom1
Cornell University1,Leibniz-Institut fur Kristallzuchtung2,Pennsylvania State University3,University of North Texas4,Rice University5,Spelman College6,Princeton University7,The Pennsylvania State University8
Multiferroics with coupled magnetic and electric orders, although rare, hold potential for low-energy-consumption materials for logic and memory capable of electric-field control of magnetism. Barium hexaferrite (BaFe<sub>12</sub>O<sub>19</sub>), the most common refrigerator magnet, is predicted to gain electric polarization order at room temperature in addition to its robust ferrimagnetism under in-plane, biaxial, compressive strain [1]. The recent realization of single-crystal substrates of Sr<sub>1.03</sub>Ga<sub>10.81</sub>Mg<sub>0.58</sub>Zr<sub>0.58</sub>O<sub>19</sub> (SGMZ) [2], an insulator that is isostructural to BaFe<sub>12</sub>O<sub>19</sub>, enables straining BaFe<sub>12</sub>O<sub>19</sub> as SGMZ has a ~1.1% smaller in-plane lattice constant. In addition to strain, to induce the ferroelectric state, an epitaxial bottom electrode is needed to control the electric state for this hexaferrite multiferroic candidate. SrCo<sub>2</sub>Ru<sub>4</sub>O<sub>11</sub> is a metallic ferromagnetic oxide [3], belongs to the same hexaferrite family as BaFe<sub>12</sub>O<sub>19</sub>, and has small (~0.3%) in-plane lattice mismatch to the SGMZ substrate. Consequently, a coherent SrCo<sub>2</sub>Ru<sub>4</sub>O<sub>11</sub> epitaxial thin film on the SGMZ substrate would be ideal for straining BaFe<sub>12</sub>O<sub>19</sub> and serving as the bottom electrode of a metal-insulator-metal structure to test for ferroelectricity in this predicted strain-induced multiferroic.<br/> <br/>Here we show that a 1.1% in-plane biaxial compressive strain from SGMZ substrates can be imposed on up to 27.5 nm thick BaFe<sub>12</sub>O<sub>19</sub> films. The full width at half maximum (FWHM) of the X-ray diffraction rocking curve of the 00<u>20</u> peak in w ranges from 0.006° to 0.009°, the smallest ever reported. Scanning transmission electron microscopy (STEM) multislice ptychography results on a commensurately strained film clearly show local electric polarization arising from the off-center displacement of Fe<sup>3+</sup> ions in the trigonal bipyramid sites, locally breaking the mirror-plane symmetry perpendicular to the c-axis of BaFe<sub>12</sub>O<sub>19</sub>. Second harmonic generation (SHG) proves the symmetry breaking on a larger scale from 6/<i>mmm</i> (bulk paraelectric BaFe<sub>12</sub>O<sub>19</sub>) to 6<i>mm</i> (fully strained BaFe<sub>12</sub>O<sub>19</sub>). Commensurately strained BaFe<sub>12</sub>O<sub>19</sub> containing 95% enriched Fe<sup>57</sup> has been synthesized. Mössbauer measurement will be made on this sample to quantify the splitting between the two sites of the iron cations in the trigonal bipyramid sites.<br/> <br/>Films of SrCo<sub>2</sub>Ru<sub>4</sub>O<sub>11</sub> were grown by MBE on (0001) SGMZ substrates in an adsorption-controlled regime. With matching substrates and adsorption-controlled growth, we have grown epitaxial, fully strained SrCo<sub>2</sub>Ru<sub>4</sub>O<sub>11</sub> thin films with even lower resistivity than SrCo<sub>2</sub>Ru<sub>4</sub>O<sub>11</sub> single crystals [3]. Our next step is to grow a commensurately strained metal-insulator-metal BaFe<sub>12</sub>O<sub>19</sub>/SrCo<sub>2</sub>Ru<sub>4</sub>O<sub>11</sub>/SGMZ stack to test for ferroelectricity.<br/> <br/>[1] Wang, P. S., Xiang, H.J. <i>Physical Review X</i> <b>4</b>, 011035 (2014).<br/>[2] Guguschev, C. et al. <i>Crystal Growth & Design </i><b>22 (4)</b>, 2557-2568 (2022).<br/>[3] Shlyk, L. et al. <i>Adv. Mater. </i><b>20</b>, 1315–1320 (2008).