Apr 26, 2024
11:30am - 12:00pm
Room 421, Level 4, Summit
Matthew Daniels1,William Borders1,Advait Madhavan2,1,Liam Pocher2,Sidra Gibeault2,Temitayo Adeyeye2,Brian Hoskins1,Daniel Lathrop2,Mark Stiles1,Jabez McClelland1
National Institute of Standards and Technology1,University of Maryland2
Matthew Daniels1,William Borders1,Advait Madhavan2,1,Liam Pocher2,Sidra Gibeault2,Temitayo Adeyeye2,Brian Hoskins1,Daniel Lathrop2,Mark Stiles1,Jabez McClelland1
National Institute of Standards and Technology1,University of Maryland2
Magnetic tunnel junctions (MTJs) are versatile devices with multiple modes of operation. Commonly thought of as memory elements in MRAM applications, magnetic tunnel junctions can also be used as stochastic bitstream generators or nanoscale oscillators. Among modern nanodevices of interest, magnetic tunnel junctions are also technologically mature and are already available in the back-end-of-line setting. In this talk, I discuss our group's recent work on utilizing these devices for alternative computing concepts, using properties like randomness and signal timing to generate energy-efficient brain-inspired computational patterns. We briefly consider the challenges of scaling device research from single-device experiments to the large numbers of devices needed for realistic computing demonstrations; to that end, I discuss NIST's Nanotechnology Accelerator Program and our upcoming hardware AI testbed that researchers can use to quickly close the technology transfer gap in moving from single-devices measurements to computing demonstrations utilizing advanced materials.